Explanipedia

Nanoscale imaging of reduced forward bias at V-pits in green-emitting nitride LEDs Open

Camille Fornos, Natalia Alyabyeva, Yen-Ten Ho, Jacques Peretti, A. C. H. Rowe , et al. · 2025

Record wall-plug efficiencies in long-wavelength, nitride light-emitting diodes (LEDs) have recently been achieved in devices containing high V-pit densities. Numerical modeling suggests this may be due to improved electrical efficiencies …

Deep-Level Structure of the Spin-Active Recombination Center in Dilute Nitrides Open

A. C. Ulibarri, C. T.-K. Lew, Shao Qi Lim, Jeffrey C. McCallum, Brett C. Johnson , et al. · 2024

A gallium interstitial defect is thought to be responsible for the spectacular spin-dependent recombination in GaAs_{1-x}N_{x} dilute nitrides. Current understanding associates this defect with at least two in-gap levels corresponding to t…

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence Open

Anis Chiout, A. Tempez, Thomas Carlier, Marc Chaigneau, Fabian Cadiz , et al. · 2024

Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro‐ and nano‐scale strain engineering. In this study, an atomic force microscope (AFM) coupled with an optical s…

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence Open

Anis Chiout, A. Tempez, Thomas Carlier, Marc Chaigneau, Fabian Cadiz , et al. · 2024

Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with …

Spin precession of light holes in the spin-orbit field of strained GaAs nanowires Open

D. Paget, T. Amand, Hadi Hijazi, A. C. H. Rowe, Guillaume Monier , et al. · 2023

International audience

Deep-level structure of the spin-active recombination center in dilute nitrides Open

A. C. Ulibarri, C. T.-K. Lew, Shao Qi Lim, Jeffrey C. McCallum, Brett C. Johnson , et al. · 2023

A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two…

Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces Open

Natalia Alyabyeva, Jacques Ding, Mylène Sauty, Judith Woerle, Yann Jousseaume , et al. · 2023

13 pages, 5 figures; work presented at the International Conference on the Physics of Semiconductors, Sydney, 2022

A Systematic Study of Spin‐Dependent Recombination in GaAs1−xNx as a Function of Nitrogen Content Open

A. C. Ulibarri, R. K. Kothari, Alejandro García, Jean‐Christophe Harmand, Sangjun Park , et al. · 2022

A systematic study of spin‐dependent recombination (SDR) under steady‐state optical pumping conditions as a function of nitrogen content, x , in dilute nitride alloys of the form GaAs 1− x N x is reported. Use of high‐excitation power dens…

Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy Open

Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky, Yi Chao Chow, Shuji Nakamura , et al. · 2022

Scanning tunneling electroluminescence (STL) microscopy is performed on a 3 nm‐thick InGaN/GaN quantum well (QW) with [In] = 0.23 such that the main light emission occurs in the green. The technique is used to map the radiative recombinati…

Nanoscale mapping of sub-gap electroluminescence from step-bunched,\n oxidized 4H-SiC surfaces Open

Natalia Alyabyeva, Jacques Ding, Mylène Sauty, Judith Woerle, Yann Jousseaume , et al. · 2022

Scanning tunneling luminescence microscopy (STLM) along with scanning\ntunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC\nsurface prepared on the silicon face of a commercial, n-type SiC wafer using a\nsilicon melt…

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy Open

Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky, Yi Chao Chow, Shuji Nakamura , et al. · 2022

Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a…

Anomalous ambipolar transport in depleted GaAs nanowires Open

Hadi Hijazi, D. Paget, A. C. H. Rowe, Guillaume Monier, Khalid Lahlil , et al. · 2022

We have used a polarized microluminescence technique to investigate\nphotocarrier charge and spin transport in n-type depleted GaAs nanowires ($\n\\approx 10^{17}$ cm$^{-3}$ doping level). At 6K, a long-distance tail appears\nin the lumine…

Spin/valley pumping of resident electrons in WSe2 and WS2 monolayers. Open

Cédric Robert, Sangjun Park, Fabian Cadiz, Laurent Lombez, Lei Ren , et al. · 2021

Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently shor…

Spin/valley pumping of resident electrons in WSe2 and WS2 monolayers Open

Cédric Robert, Sang‐Jun Park, Fabian Cadiz, Laurent Lombez, Lei Ren , et al. · 2021

Imaging Seebeck drift of excitons and trions in MoSe2 monolayers Open

Sangjun Park, Bo Han, Caroline Boule, D. Paget, A. C. H. Rowe , et al. · 2021

Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spa…

Anomalous, space-charge-limited piezoresistance in defect-engineered silicon Open

H. Li, Abel Thayil, C. T.-K. Lew, Marcel Filoche, Brett C. Johnson , et al. · 2020

The space-charge-limited, steady-state piezoresistance (PZR) in thin device layers of silicon-on-insulator wafers containing a nominal $10^{14}$ cm$^{-3}$ silicon divacancy defects changes sign as a function of applied bias. Above a punch-…

Le spin des électrons se transporte-t-il comme leur charge ? Open

Fabian Cadiz, A. C. H. Rowe, D. Paget · 2020

Pour répondre aux besoins croissants de la microélectronique, il a été proposé de transmettre l’information par le spin de l’électron, cette variable quantique dont l’analogue classique est la rotation sur lui-même. Il serait naturel de pe…

Giant, Anomalous Piezoimpedance in Silicon-on-insulator Open

Heng Li, Christopher Tao-Kuan Lew, Brett C. Johnson, Jeffrey C. McCallum, S. Arscott , et al. · 2019

A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response strongly depends on the measurement frequency, $ω$, and con…

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface Open

H. Li, Lucio Martinelli, Fabian Cadiz, A. Bendounan, S. Arscott , et al. · 2019

Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure Open

Fabian Cadiz, Cédric Robert, Emmanuel Courtade, Marco Manca, Lucio Martinelli , et al. · 2018

We have combined spatially resolved steady-state micro-photoluminescence with time-resolved photoluminescence to investigate the exciton diffusion in a WSe2 monolayer encapsulated with hexagonal boron nitride. At 300 K, we extract an excit…

Ambipolar spin diffusion in p-type GaAs: A case where spin diffuses more than charge Open

Fabian Cadiz, Vincent Notot, Jovana Prekodravac Filipović, D. Paget, C. Weber , et al. · 2017

We investigate the diffusion of charge and spin at 15 K in p-type GaAs, combining transient-grating and energy-resolved microluminescence measurements to cover a broad range of photoelectron density. At very low optical power, in a unipola…

Polarizers, optical bridges, and Sagnac interferometers for nanoradian polarization rotation measurements Open

A. C. H. Rowe, Indira Zhaksylykova, Guillaume Dilasser, Y. Lassailly, Jacques Peretti · 2017

The ability to measure nanoradian polarization rotations, θF, in the photon shot noise limit is investigated for partially crossed polarizers (PCP), a static Sagnac interferometer, and an optical bridge, each of which can in principle be u…

Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density Open

Fabian Cadiz, David Lagarde, P. Renucci, D. Paget, T. Amand , et al. · 2017

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 × 1017 cm−3 using time-resolved photoluminescence spectroscopy at 15 K. At low photocarrier concentration, acceptors are mostly neutral and p…

Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar Open

Vincent Notot, D. Paget, A. C. H. Rowe, Lucio Martinelli, Fabian Cadiz , et al. · 2017

Using a microfabricated p-type GaAs Hall bar, it is shown that the combined application of co-planar electric and magnetic fields enables the observation of spatial oscillations of the photoluminescence circular polarization due to the pre…

Geometric and surface chemical origin of the piezoresistance in silicon nanowires Open

Megan M. McClarty, Nikoletta Jegenyés, Matthieu Gaudet, Chiara Toccafondi, Razvigor Ossikovski , et al. · 2015

A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires, from the usual positive bulk effect to anomalous (negative) PZR and giant PZR two orders of magnitude larger than th…

Absence of carrier separation in ambipolar charge and spin drift in p+-GaAs Open

Fabian Cadiz, D. Paget, A. C. H. Rowe, Lucio Martinelli, S. Arscott · 2015

The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p+ GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity,…

Ambipolar spin-spin coupling in-GaAs Open

Fabian Cadiz, D. Paget, A. C. H. Rowe, S. Arscott · 2015

A novel spin-spin coupling mechanism that occurs during the transport of\nspin-polarized minority electrons in semiconductors is described. Unlike the\nCoulomb spin drag, this coupling arises from the ambipolar electric field which\nis cre…

Effect of the Pauli principle on photoelectron spin transport inGaAs Open

Fabian Cadiz, D. Paget, A. C. H. Rowe, T. Amand, P. Barate , et al. · 2015

International audience

Central role of electronic temperature for photoelectron charge and spin mobilities in p+-GaAs Open

Fabian Cadiz, D. Paget, A. C. H. Rowe, E. Peytavit, S. Arscott · 2015

The charge and spin mobilities of minority photoelectrons in p+-GaAs are determined by monitoring the effect of an electric field on the spatial profiles of the luminescence and of its polarization. By using electric fields to increase the…

Anomalous temperature dependence of photoelectron charge and spin mobilities in p+-GaAs Open

Fabian Cadiz, D. Paget, A. C. H. Rowe, E. Peytavit, S. Arscott · 2015

The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and spin mobilities of photoelectrons are equal in all conditions…

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