Adrian Chasin
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View article: Incorporation of Temperature Impact on Hot-Carrier Degradation into Compact Physics Model
Incorporation of Temperature Impact on Hot-Carrier Degradation into Compact Physics Model Open
We extend our compact physics model (CPM) for hot-carrier degradation (HCD) to cover the impact of ambient temperature on HCD. Three components of this impact are taken into account. First, variations in temperature perturb carrier transpo…
View article: The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs
The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs Open
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy di…
View article: In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI Open
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 40% In (metal ratio) suffers from degradation under forming …
View article: Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers
Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers Open
For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to O…
View article: A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence
A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence Open
Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that r…
View article: Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range Open
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively). Special attention is paid to the contribution of secondary carriers (generated by …
View article: Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs
Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs Open
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard …
View article: Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study
Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study Open
sponsorship: The work of M. Vandemaele was supported by the Ph.D. Fellowship of the Research Foundation Flanders (Belgium) under Grant 11A3621N. The review of this letter was arranged by Editor S. Hall. (Corresponding author: M. Vandemaele…
View article: Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search
Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search Open
To search for the next semiconductor breakthrough, we calculate properties for binary amorphous systems and model to predict them for complex compositions.
View article: The properties, effect and extraction of localized defect profiles from degraded FET characteristics
The properties, effect and extraction of localized defect profiles from degraded FET characteristics Open
sponsorship: Michiel Vandemaele is supported by a PhD Fellowship of the Research Foundation -Flanders (Belgium) (application number 11A3621N). Fruitful discussions with Zlatan Stanojevi ' c and Fabian Bufler are gratefully acknowledged. (R…
View article: (Invited) Sub-40mV Sigma V<sub>TH</sub> Igzo nFETs in 300mm Fab
(Invited) Sub-40mV Sigma V<sub>TH</sub> Igzo nFETs in 300mm Fab Open
Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is challenging with an integration of front side gate, a scaled b…
View article: Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach
Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach Open
sponsorship: This work was supported in part by the European Union's Horizon 2020 Research and Innovation Programme through the Marie Sklodowska-Curie Grant 794950 and in part by the Austrian Science Fund (FWF) under Grant P31204-N30. (Eur…
View article: Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs
Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs Open
sponsorship: This work was supported in part by the European Union's Horizon 2020 Research and Innovation Programme through the Marie Sklodowska-Curie under Grant 794950 and in part by the Austrian Science Fund (FWF) under Grant P31204-N30…
View article: Role of Defects in the Reliability of HfO<sub>2</sub>/Si-Based Spacer Dielectric Stacks for Local Interconnects
Role of Defects in the Reliability of HfO<sub>2</sub>/Si-Based Spacer Dielectric Stacks for Local Interconnects Open
MIM planar capacitors with different spacer dielectrics (SiN, SiCO and SiCBN) of varying thickness deposited on a 2nm Hf02 gate dielectric, were fabricated to investigate the gate/spacer stack intrinsic electrical reliability performance. …
View article: Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications
Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications Open
© 1963-2012 IEEE. High-performance integrated tin monoxide bottom-gate staggered p-channel thin-film transistors (TFTs) are realized and reported. The active layer has been formed by thermal vacuum evaporation and rapid thermal annealing u…