A. Debelle
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View article: Innovative Disposal Container Materials: Improved Durability and Manufacturing Feasibility
Innovative Disposal Container Materials: Improved Durability and Manufacturing Feasibility Open
Deep geological disposal of high-level radioactive waste (HLW) is the internationally preferred final waste management option to prevent the biosphere from radiologically relevant release of radioactive nuclides for at least 100,000 to 1 m…
View article: Innovative Ceramic-Based Solution for a Barrier in an EBS: Development, Mechanical Behaviour, and Ageing of a Tunnel Liner as a Test Case
Innovative Ceramic-Based Solution for a Barrier in an EBS: Development, Mechanical Behaviour, and Ageing of a Tunnel Liner as a Test Case Open
The concept of a safe geological repository for managing radioactive waste relies on a multi-barrier system comprising both the host rock and various engineered barriers, these latter being referred to as the engineered barrier system (EBS…
View article: Ceramic materials as innovative solutions for the HLW disposal containers: global overview and focus on Andra's R&D programme
Ceramic materials as innovative solutions for the HLW disposal containers: global overview and focus on Andra's R&D programme Open
The concept of a safe geological repository for managing radioactive waste relies on a multi-barrier system comprising both the host rock and various engineered barriers, these latter being referred to as the engineered barrier system (EBS…
View article: Electrically Activated W-Doped VO<sub>2</sub> Films for Reliable, Large-Area, Broadband THz Wave Modulators
Electrically Activated W-Doped VO<sub>2</sub> Films for Reliable, Large-Area, Broadband THz Wave Modulators Open
THz amplitude modulators and switches are considered to be the main building blocks of future THz communication systems. Despite rapid progress, modulation and switching devices in this electromagnetic spectrum lag far behind other frequen…
View article: Electrically activated W-doped VO2 films for reliable, large-area, broadband THz waves modulators
Electrically activated W-doped VO2 films for reliable, large-area, broadband THz waves modulators Open
THz amplitude modulators and switches are considered to be the main building blocks of future THz communication systems. Despite rapid progress, modulation and switching devices in this electromagnetic spectrum lag far behind other frequen…
View article: Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC
Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC Open
Strain engineering using ion beams is a current topic of research interest in semiconductor materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain-depth analysis in GaAs irradiated with 300 keV Ar and 4…
View article: Convolutional neural network analysis of x-ray diffraction data: strain profile retrieval in ion beam modified materials
Convolutional neural network analysis of x-ray diffraction data: strain profile retrieval in ion beam modified materials Open
This work describes a proof of concept demonstrating that convolutional neural networks (CNNs) can be used to invert x-ray diffraction (XRD) data, so as to, for instance, retrieve depth-resolved strain profiles. The determination of strain…
View article: Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs
Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs Open
The damage induced in GaAs crystals irradiated with dual-ion beam (low-energy I2+ and high-energy Fe9+), producing simultaneous nuclear (Sn) and electronic (Se) energy depositions, was investigated using several characterization techniques…
View article: Computational diffraction reveals long-range strains, distortions and disorder in molecular dynamics simulations of irradiated single crystals
Computational diffraction reveals long-range strains, distortions and disorder in molecular dynamics simulations of irradiated single crystals Open
Atomic-scale simulations, and in particular molecular dynamics (MD), are key assets to model the behavior of the structure of materials under the action of external stimuli, say temperature, strain or stress, irradiation, etc . Despite the…
View article: Computational diffraction reveals long-range strains, disorder and crystalline domains in atomic scale simulations
Computational diffraction reveals long-range strains, disorder and crystalline domains in atomic scale simulations Open
Atomic scale simulations are a key element of modern science in that they allow to understand, and even predict, complex physical or chemical phenomena on the basis of the fundamental laws of nature. Among the different existing atomic sca…
View article: Opposite trends in the microstructural evolution of irradiated ceramics driven by asymmetric defect migration energies
Opposite trends in the microstructural evolution of irradiated ceramics driven by asymmetric defect migration energies Open
X-ray diffraction experiments complemented with numerical simulations reveal that two ceramic oxide materials, c-ZrO$_2$ and MgO, under similar ion irradiation conditions, exhibit an unexpected, opposite response with varying the irradiati…
View article: New developments in the simulation of Rutherford backscattering spectrometry in channeling mode using arbitrary atom structures
New developments in the simulation of Rutherford backscattering spectrometry in channeling mode using arbitrary atom structures Open
As Rutherford backscattering spectrometry in channeling mode (RBS/C) is an efficient technique for characterizing crystallographic defects, its computational simulation has drawn attention over the past several decades. Recently, a RBS/C s…
View article: Comparison of neutron and ion irradiation induced lattice parameter changes in Ni and MgO single crystals
Comparison of neutron and ion irradiation induced lattice parameter changes in Ni and MgO single crystals Open
Data available in the literature of lattice parameter changes in Ni, Cu and\nMgO single crystals irradiated in neutron reactors are tentatively reproduced\nusing ad hoc ion irradiation experiments. The nature and energy of the ions\nwere s…
View article: Ionization-induced thermally activated defect-annealing process in SiC
Ionization-induced thermally activated defect-annealing process in SiC Open
Ionizing events can lead to panoply of irradiation effects, and in silicon carbide (SiC), they drastically modify the defect production rate or the initial density. To better comprehend this phenomenon, 6H-SiC single crystals were first pr…
View article: Strain engineering 4H-SiC with ion beams
Strain engineering 4H-SiC with ion beams Open
Single crystals of 4H-SiC irradiated with 900 keV Si and 21 MeV Ni ions separately and sequentially were studied by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC …