A. Declémy
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View article: Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor
Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor Open
p-doped 4H-SiC substrates were implanted with 57Fe ions at energies ranging from 30 to 160 keV and subjected to a rapid thermal annealing in order to produce a homogeneous Fe concentration inside a 100 nm-thick region in the semiconducting…
View article: Effect of temperature on Xe implantation-induced damage in 4H-SiC
Effect of temperature on Xe implantation-induced damage in 4H-SiC Open
Damage formation in implanted 4H-SiC was studied as a function of dose and temperature of implantation. At RT the maximal strain as well as the surface swelling linearly increases suggesting a point defects swelling. With increasing temper…
View article: Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry
Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry Open
P-doped 6H-SiC substrates were implanted with 57Fe ions at 380 °C or 550 °C to produce a diluted magnetic semiconductor with an Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with 57Fe Conversi…