Edmundo A. Gutiérrez-D
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View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling
RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling Open
Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of leakage current on the small-signal input impedance at RF…
View article: IEEE Electron Devices Society Information
IEEE Electron Devices Society Information Open
View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K
Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K Open
This paper introduces a two-dimensional (2D) numerical simulation of the amplification of space charge waves using negative differential conductance in a typical MOS silicon–germanium (SiGe)-based field-effect transistors (FET) and complem…
View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: IEEE ELECTRON DEVICES SOCIETY
IEEE ELECTRON DEVICES SOCIETY Open
View article: n-MOS Transistor Impact Ionization Boosted by Cumulative Stress Degradation in a 250-nm SiGe BiCMOS Technology
n-MOS Transistor Impact Ionization Boosted by Cumulative Stress Degradation in a 250-nm SiGe BiCMOS Technology Open
We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature. As expected, the electrical basic parameters of the transistor,…
View article: Editorial Kudos to Our Reviewers
Editorial Kudos to Our Reviewers Open
The technical contributions of the authors to T-DMR have shown to be relevant to our readership. However, that quality and relevance come associated with the amount of effort donated to our “cause” by our editors and manuscript reviewers. …
View article: Editorial From Edmundo A. Gutiérrez-D
Editorial From Edmundo A. Gutiérrez-D Open
It is an honor and a great pleasure to get the opportunity to be in service as Editor-in-Chief of this scientific transactions. I am very thankful to Dr. Anthony Oates, the outgoing Editor-In-Chief, for the brilliant work He has done in ke…
View article: DC and 28 GHz Reliability of a SOI FET Technology
DC and 28 GHz Reliability of a SOI FET Technology Open
We introduce experimental results of the I-V degradation characteristics of a Silicon SOI technology for RF applications when stressed under both; a 28 GHz and a DC stress input signals. Then we compare the effect of DC and RF stress on th…
View article: Experimental Characterization of the Random Telegraph Noise Signature in MOSFETs Under the Influence of Magnetic Fields
Experimental Characterization of the Random Telegraph Noise Signature in MOSFETs Under the Influence of Magnetic Fields Open
Random telegraph noise has been experimentally characterized in two sets of nMOSFET devices under the influence of perpendicular magnetic fields at room temperature. The experimental measurements were performed following a systematic trapp…
View article: Thermo-Magnetic Effects in Nano-Scaled MOSFET: An Experimental, Modeling, and Simulation Approach
Thermo-Magnetic Effects in Nano-Scaled MOSFET: An Experimental, Modeling, and Simulation Approach Open
A numerical simulation methodology for incorporating thermo-magnetic effects on the MOSFET gate tunneling current is introduced. The methodology is based on the solution of the Schrödinger-Poisson coupled system, which allows simulating th…