A. Dussaigne
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View article: Thermochemical treatment of sputtered-AlN/2D MoS<sub>2</sub> seed layers: a new elaboration process of highly <i>c</i>-axis AlN films
Thermochemical treatment of sputtered-AlN/2D MoS<sub>2</sub> seed layers: a new elaboration process of highly <i>c</i>-axis AlN films Open
AlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. Atomic layer deposition -grown 2D-MoS 2 thin film can be…
View article: Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids
Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids Open
View article: Nanoscale Mapping of the Structural Relaxation in Microstructured In<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N Pseudosubstrates by Scanning X‐ray Diffraction Microscopy
Nanoscale Mapping of the Structural Relaxation in Microstructured In<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N Pseudosubstrates by Scanning X‐ray Diffraction Microscopy Open
The technological advancement of mobile devices for virtual and augmented reality requires displays that are faster, more energy‐efficient, and of higher resolution. In x Ga 1− x N‐based micro‐light‐emitting diodes (LEDs) have the potentia…
View article: Regular Red-Green-Blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids
Regular Red-Green-Blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids Open
Full color micro-displays with a pixel pitch below 10 µm are needed for augmented and virtual reality applications. In the native emission approach, high efficiency Red-Green-Blue (RGB) pixels should be reached using monolithically integra…
View article: Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy
Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy Open
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epi…
View article: Full InGaN red light emitting diodes
Full InGaN red light emitting diodes Open
The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec, namely, InGaNOS, a n-doped buffer layer formed by a set of InxGa1…
View article: Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography
Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography Open
Micro light emitting diodes have been grown by metal organic vapor phase epitaxy on standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating higher concentrations of indium for identical growth conditions. Green…
View article: InGaN islands and thin films grown on epitaxial graphene
InGaN islands and thin films grown on epitaxial graphene Open
In this work, the growth of InGaN on epitaxial graphene by molecular beam epitaxy is studied. The nucleation of the alloy follows a three-dimensional (3D) growth mode in the observed temperature range of 515 °C-765 °C, leading to the forma…
View article: Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography
Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography Open
The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT resu…
View article: Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice
Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice Open
View article: Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy
Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy Open
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View article: Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells Open
The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determina…
View article: Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>m</mml:mi></mml:math>-plane InGaN/GaN quantum wells
Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in -plane InGaN/GaN quantum wells Open
We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we …
View article: Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells Open
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al, Ga) N/GaN quantum well structures by means of spatially and time-resolved photoluminescence spectroscopy. The transport in these strongly disord…