Francesco La Via
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View article: Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters
Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters Open
In the simulation of 3C-SiC strain gauges in dynamic environment—particularly those involving vibrations and wave propagation—the accurate representation of energy dissipation is essential for reliable predictive modeling. This paper discu…
View article: Numerical simulations for neutron detector optimization
Numerical simulations for neutron detector optimization Open
In this work, simulations are conducted to optimize a Silicon Carbide (SiC) detector for the detection of 14.1 MeV neutrons [1]. The device features an active thickness achieved through epitaxial growth of 250 μm and an active area of 25 m…
View article: Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector
Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector Open
The objective of the proposed work was to investigate the electrical performance of a 250 µm-thick 4H-SiC p-n junction detector after irradiation with DT neutrons (14.1 MeV energy) at high temperature (500 °C). The results showed that the …
View article: Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams
Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams Open
Silicon carbide (SiC) is an interesting semiconductor for MEMS devices. The high-value Young’s modulus of silicon carbide facilitates high frequencies and quality (Q) factors in resonant devices built with double-clamped beams. The aim of …
View article: SiC free-standing membrane for X-ray intensity monitoring in synchrotron radiation beamlines
SiC free-standing membrane for X-ray intensity monitoring in synchrotron radiation beamlines Open
For many synchrotron radiation experiments, it is critical to perform continuous, real-time monitoring of the X-ray flux for normalization and stabilization purposes. Traditional transmission-mode monitors included metal mesh foils and ion…
View article: GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT Open
This work discusses the use of gallium nitride (GaN)-based solid-state devices for high-power, high-frequency, and high-temperature technology. The article presents the results of an investigation into the Al fraction of AlGaN as a functio…
View article: Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults Open
In this work, we investigated the impact of crystallographic defects (specifically stacking faults, SFs) on the mechanisms of the current transport in 4H-SiC Schottky contacts. The electrical characteristics were studied under both forward…
View article: Stress Fields Distribution and Simulation in 3C-SiC Resonators
Stress Fields Distribution and Simulation in 3C-SiC Resonators Open
In this paper the stress field distribution in 3C-SiC (111) resonators has been studied by micro-Raman measurements and COMSOL simulations. The measurements show that the asymmetry of the anchor points configuration produce an asymmetry in…
View article: 250 μm Thick Detectors for Neutron Detection: Design, Electrical Characteristics, and Detector Performances
250 μm Thick Detectors for Neutron Detection: Design, Electrical Characteristics, and Detector Performances Open
Solid State Detectors (SSD) are crucial for fast neutron detection and spectroscopy in tokamaks due to their solid structure, neutron-gamma discrimination, and magnetic field resistance. They provide high energy resolutions without externa…
View article: Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon Open
In this work, the fabrication of wafer-level vacuum packaged 3C-SiC resonators obtained from layers grown on and silicon is reported. The resonant microstructures are double-clamped beams encapsulated by glass-silicon anodic bonding usin…
View article: Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation
Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation Open
Free standing wafers of the cubic polytype of silicon carbide (3C-SiC) grown on micromachined silicon substrates can be a platform for new power electronic devices, provided that suitable device fabrication processes are understood and opt…
View article: TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer
TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer Open
Within this work, the effect of high dose Al ion implantation on 4H-SiC epitaxial layer is displayed. Through TEM investigation it is demonstrated that the implanted surface is suitable as seed for subsequent epitaxial regrowth generating …
View article: Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions Open
In this work we have studied hydrogen etching of Silicon Carbide (SiC) chips at high temperatures and in confined limited regions, to elucidate and control the formation and propagation of terraces on the surface of SiC (0001) 4° off-axis …
View article: Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures
Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures Open
The Silicon Carbide detector (SiC) is an object of research as an alternative to diamond detectors for fast neutron detection and spectrometry where harsh environments are an issue, like in Tokamaks. Since future breeding blankets mock-ups…
View article: Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000 Open
In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double- clamped beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is reported. Open-loop resonance measurements are performed on…
View article: Advanced approach of bulk (111) 3C-SiC epitaxial growth
Advanced approach of bulk (111) 3C-SiC epitaxial growth Open
3C-SiC films grown on (111) Si substrates exhibit poor crystal quality and experience wafer cracks and bowing preventing access to bulk growth. This work reports innovative Chemical Vapor Deposition (CVD) growth methodology on 4 in. Si sub…
View article: Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices Open
Metal-oxide-semiconductor (MOS) capacitors with Al2O3 as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). Al2O3 is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO2…
View article: Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults Open
The presence of crystallographic defects can induce notable effects on the mechanisms ruling the current transport in metal/semiconductor contacts. In this context, in this Letter, the impact of stacking faults (SFs) on the characteristics…
View article: Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors Open
While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon ca…
View article: Emerging SiC Applications beyond Power Electronic Devices
Emerging SiC Applications beyond Power Electronic Devices Open
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems…
View article: Emerging SiC Applications beyond Power Electronic Devices
Emerging SiC Applications beyond Power Electronic Devices Open
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems…
View article: Emerging SiC Applications beyond Power Electronic Devices
Emerging SiC Applications beyond Power Electronic Devices Open
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems…
View article: Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements
Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements Open
X-Ray diffraction measurements of lattice parameter were performed for (111) and (100) oriented 3C-SiC/Si epiwafers. Strain of 3C-SiC epilayer and Si substrate were estimated and the result was compared with routine wafer deformation measu…
View article: Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators
Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators Open
In this work, we investigate the correlation between tensile residual stress and Q-factor of double-clamped beams fabricated on epitaxial 3C-SiC layers grown on both and silicon substrates, using a completely optical measurement setup to…
View article: Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy
Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy Open
In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm …
View article: Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC
Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC Open
A systematic approach to determine the most crucial growth parameters and their effect on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C‐SiC) is conducted. Close space physical vapor transpor…
View article: Performance of a thick 250 μm silicon carbide detector: stability and energy resolution
Performance of a thick 250 μm silicon carbide detector: stability and energy resolution Open
Silicon carbide detectors represent an alternative to diamond detectors for fast neutron detection in harsh environments, especially fusion plasmas. Previous studies on thin prototypes (either 10 μm or 100 μm thick) suggested that thicker …
View article: Laser crystallization of amorphous TiO2 on polymer
Laser crystallization of amorphous TiO2 on polymer Open
The deposition of crystalline TiO2 on polymers can boost its use in a large plethora of applications. In this work, we deposited, through the low-temperature atomic layer deposition (LT-ALD) technique, a thin layer of amor-phous TiO2 on po…
View article: Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials Open
Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. …