P. Gröning
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View article: Strain relaxation defects in <scp>Ge</scp> crystals grown on <scp>Si</scp> pillars
Strain relaxation defects in <span>Ge</span> crystals grown on <span>Si</span> pillars Open
Due to the differences in lattice parameters and thermal expansion coefficients, Ge films grown on Si substrates suffer from a high density of threading dislocations, cracks and wafer bowing. One method to avoid these problems is to grow G…
View article: Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking
Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking Open
We demonstrate that the elastic stress relaxation mechanism in micrometre-sized, highly mismatched heterostructures may be enhanced by employing patterned substrates in the form of necked pillars, resulting in a significant reduction of th…
View article: Analysis of edge threading dislocations b→=12〈110〉 in three dimensional Ge crystals grown on (001)-Si substrates
Analysis of edge threading dislocations b→=12〈110〉 in three dimensional Ge crystals grown on (001)-Si substrates Open
Threading dislocations (TDs) in germanium (Ge) crystals epitaxially grown on a patterned (001)-silicon (Si) substrate are investigated using transmission electron microscopy (TEM) techniques. Analysis of dislocations performed on the Ge cr…
View article: Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance
Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance Open
The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing …