A. J. SpringThorpe
YOU?
Author Swipe
Extended Temperature Modeling of InGaAs/InP SPADs Open
We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in …
Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes Open
Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented for small variations of the multiplication width. The Zn dopant diffusion front is obtained by numer…
Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique Open
This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn di…