A. Lachowski
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View article: NbN-based Josephson junctions grown by plasma-assisted molecular beam epitaxy
NbN-based Josephson junctions grown by plasma-assisted molecular beam epitaxy Open
Improved process for the growth of NbN by plasma-assisted molecular beam epitaxy (PAMBE) is needed for the fabrication of Josephson junctions, that are building blocks of qubits in quantum computers. Here we propose an approach to grow cub…
View article: Cathodoluminescence in a Scanning Electron Microscope Operated in Transmission Mode
Cathodoluminescence in a Scanning Electron Microscope Operated in Transmission Mode Open
This study demonstrates the potential of correlative analysis cathodoluminescence (CL) carried out in a scanning electron microscope (SEM) operated in transmission mode in combination with a segmented detector. As demonstrated for the anal…
View article: Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing
Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing Open
In the presented research, we explore the possibility of modifying the electrical properties of ammonothermal gallium nitride substrates through ion implantation of magnesium and ultra-high-pressure annealing (UHPA). The goal is to achieve…
View article: In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells
In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells Open
In situ X-ray reciprocal space mapping was performed during the interval heating and cooling of InGaN/GaN quantum wells (QWs) grown via metal–organic vapor phase epitaxy (MOVPE). Our detailed in situ X-ray analysis enabled us to track chan…
View article: The crucial influence of Al on the high-temperature oxidation resistance of Ti1-xAlxBy diboride thin films (0.36 ≤ x ≤ 0.74, 1.83 ≤ y ≤ 2.03)
The crucial influence of Al on the high-temperature oxidation resistance of Ti1-xAlxBy diboride thin films (0.36 ≤ x ≤ 0.74, 1.83 ≤ y ≤ 2.03) Open
The high-temperature oxidation resistance and mechanical properties of Ti1-xAlxBy (0.36 ≤ x ≤ 0.74, and 1.83 ≤ y ≤ 2.03) films grown by hybrid HiPIMS/DCMS co-sputtering from TiB2 and AlB2 targets at substrate temperatures lower than180 °C …
View article: Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability
Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability Open
GaN/InGaN quantum wells (QWs), widely used as the active region in blue and green light emitters, are susceptible to structural degradation at temperatures above 900 °C. The degradation process is initiated by the diffusion and clustering …
View article: Bidirectional LED as an AC-driven visible-light source
Bidirectional LED as an AC-driven visible-light source Open
The GaN-based light emitting diodes (LEDs) brought a revolution in the lighting market by becoming the most energy-efficient light sources. However, the power grid, i.e. electricity delivery system, is built based on alternating current (A…
View article: Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates
Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates Open
The influence of edge-type threading dislocations (TDs) on the epitaxial growth of AlGaN on native AlN substrates was investigated theoretically and experimentally. In the step flow growth regime, we find that pure edge-type TDs cause a pi…
View article: Investigation of MXenes Oxidation Process during SPS Method Annealing
Investigation of MXenes Oxidation Process during SPS Method Annealing Open
This paper discusses the effects of the environment and temperature of the Ti3C2 (MXene) oxidation process. The MXene powders were annealed at temperatures of 1000, 1200, 1400, 1600, and 1800 °C in argon and vacuum using a Spark Plasma Sin…
View article: Applications insight into the plasmochemical state and optical properties of amorphous CNx films deposited by gas injection magnetron sputtering method
Applications insight into the plasmochemical state and optical properties of amorphous CNx films deposited by gas injection magnetron sputtering method Open
This manuscript reports the results of carbon nitride (CNx) film deposition carried out using the gas injection magnetron sputtering method. In this experiment, a pulsed gas injection was used to arrange the varying neon/nitrogen (Ne/N2) p…
View article: Influence of Ti3C2Tx MXene and Surface-Modified Ti3C2Tx MXene Addition on Microstructure and Mechanical Properties of Silicon Carbide Composites Sintered via Spark Plasma Sintering Method
Influence of Ti3C2Tx MXene and Surface-Modified Ti3C2Tx MXene Addition on Microstructure and Mechanical Properties of Silicon Carbide Composites Sintered via Spark Plasma Sintering Method Open
This article presents new findings related to the problem of the introduction of MXene phases into the silicon carbide matrix. The addition of MXene phases, as shown by the latest research, can significantly improve the mechanical properti…
View article: Silicon carbide nanocomposites reinforced with disordered graphitic carbon formed in situ through oxidation of Ti3C2 MXene during sintering
Silicon carbide nanocomposites reinforced with disordered graphitic carbon formed in situ through oxidation of Ti3C2 MXene during sintering Open
This article describes the manufacturing of silicon carbide composites with the addition of quasi-two-dimensional titanium carbide Ti 3 C 2 , known as MXene. The composites were obtained by the powder metallurgy technique, consolidated wit…
View article: Microstructure and Mechanical Properties of Alumina Composites with Addition of Structurally Modified 2D Ti3C2 (MXene) Phase
Microstructure and Mechanical Properties of Alumina Composites with Addition of Structurally Modified 2D Ti3C2 (MXene) Phase Open
This study presents new findings related to the incorporation of MXene phases into ceramic. Aluminium oxide and synthesised Ti3C2 were utilised as starting materials. Knowing the tendency of MXenes to oxidation and degradation, particularl…
View article: The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs Open
The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphir…
View article: Influence of MXene (Ti3C2) Phase Addition on the Microstructure and Mechanical Properties of Silicon Nitride Ceramics
Influence of MXene (Ti3C2) Phase Addition on the Microstructure and Mechanical Properties of Silicon Nitride Ceramics Open
This paper discusses the influence of Ti3C2 (MXene) addition on silicon nitride and its impact on the microstructure and mechanical properties of the latter. Composites were prepared through powder processing and sintered using the spark p…