A. Osinsky
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View article: <i>In situ</i> patterned damage-free etching of three-dimensional structures in β-Ga2O3 using triethylgallium
<i>In situ</i> patterned damage-free etching of three-dimensional structures in β-Ga2O3 using triethylgallium Open
In this work, we report on the anisotropic etching characteristics of β-Ga2O3 using triethylgallium (TEGa) performed in situ within an MOCVD chamber. At sufficiently high substrate temperatures, TEGa can act as a strong etchant for β-Ga2O3…
View article: Characterization of extended defect evolution in 1.2–12 <i>μ</i>m thick homoepitaxial (010) β-Ga2O3 grown by close-injection showerhead metal-organic chemical vapor deposition
Characterization of extended defect evolution in 1.2–12 <i>μ</i>m thick homoepitaxial (010) β-Ga2O3 grown by close-injection showerhead metal-organic chemical vapor deposition Open
Homoepitaxial Si-doped (010) β-Ga2O3 epitaxial layers with thicknesses ranging from 1.2 to 12 μm were grown simultaneously via close-injection showerhead metal-organic chemical vapor deposition on both Czochralski and edge-defined, film-fe…
View article: Phase Controlled Metalorganic Chemical Vapor Deposition Growth of Wafer-Scale Molybdenum Ditelluride
Phase Controlled Metalorganic Chemical Vapor Deposition Growth of Wafer-Scale Molybdenum Ditelluride Open
Metalorganic chemical vapor deposition (MOCVD) has become a pivotal technique for developing wafer-scale transition metal dichalcogenide (TMD) 2D materials. This study investigates the impact of MOCVD growth conditions on achieving uniform…
View article: In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium
In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium Open
In this work, we report on the anisotropic etching characteristics of \b{eta}-Ga2O3 using triethylgallium (TEGa) performed in-situ within an MOCVD chamber. At sufficiently high substrate temperature, TEGa can act as a strong etchant for \b…
View article: Demonstration of MOCVD based <i>in situ</i> etching of <i>β</i>-Ga2O3 using TEGa
Demonstration of MOCVD based <i>in situ</i> etching of <i>β</i>-Ga2O3 using TEGa Open
In this work, we demonstrate an in situ etch technique for β-Ga2O3 inside a metalorganic chemical vapor deposition (MOCVD) reactor using triethylgallium (TEGa) as the etching agent. At sufficiently high substrate temperatures (Tsub), TEGa …
View article: Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy Open
Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the…
View article: Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates
Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates Open
We report on the demonstration of β-Ga2O3 MOSFETs fabricated on 1-inch bulk substrates using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si2H6) as the silicon precursor. Sheet charge uniformity of the as-grown films was measure…
View article: Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates
Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates Open
We report on the demonstration of β-Ga2O3 MOSFETs fabricated on 1-inch bulk substrates using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si2H6) as the silicon precursor. Sheet charge uniformity of the as-grown films was measure…
View article: Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films
Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films Open
Epitaxial lift-off (ELO) of high-quality GaN layers allows for integration with a variety of materials enabling improved performance, reduced costs, and development of new electronics. Of the ELO technologies, two-dimensional (2D) material…
View article: Operation of NiO/β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Lateral Rectifiers at up to 225 °C
Operation of NiO/β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Lateral Rectifiers at up to 225 °C Open
The characteristics of NiO/ β -(Al0.21Ga0.79)2O3/Ga2O3 heterojunction lateral geometry rectifiers with the epitaxial layers grown by metal organic chemical vapor deposition were measured over a temperature range from 25 °C–225 °C. The forw…
View article: Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting
Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting Open
The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered…
View article: Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films
Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films Open
We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heav…
View article: 4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup>
4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup> Open
β -Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior reverse breakdown voltages ( V BR ) and ON currents ( I DMAX ). A sandwiched SiN x dielectric field plate design is utilized that prevents etching-related …
View article: Ge doping of β-Ga2O3 by MOCVD
Ge doping of β-Ga2O3 by MOCVD Open
We report on the Ge doping of Ga2O3 using metalorganic chemical vapor deposition (MOCVD) epitaxy. The effects of the GeH4/N2 flow rate, substrate temperature, VI/III ratio, type of Ga precursor, and MOCVD reactor geometry on the incorporat…
View article: Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² Open
We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $\beta$-Ga$_2$O$_3$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact laye…
View article: H2O vapor assisted growth of β-Ga2O3 by MOCVD
H2O vapor assisted growth of β-Ga2O3 by MOCVD Open
The role of water (H2O) vapor in reducing background impurity concentration in epitaxial Ga2O3 thin films grown by metalorganic chemical vapor deposition (MOCVD) was studied. Adding H2O vapor to oxygen was found to increase the surface rou…
View article: Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD
Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD Open
We report on record low free carrier concentration values in metalorganic chemical vapor deposition (MOCVD) grown β-Ga2O3 by using N2O for oxidation. Contrary to the pure oxygen, the N2O oxidant produced β-Ga2O3 thin films co-doped with ni…
View article: Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown <b>β</b>-Ga2O3
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown <b>β</b>-Ga2O3 Open
We report on record electron mobility values measured in lightly Si doped homoepitaxial β-Ga2O3 grown by metal-organic chemical vapor deposition. The transport properties of the films were studied using temperature-dependent Hall measureme…
View article: Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film Open
We report on a high performance Pt/n−Ga2O3/n+Ga2O3 solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active area of the photodiode was fabricated using ∼30 Å thick semi-transparent Pt that h…
View article: MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Open
In this work, we report record electron mobility values in unintentionally doped β-Ga2O3 films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped regrown n+ β-Ga2O3 contact layers, we were able to maintain Ohmic …
View article: Solar blind photodetector based on epitaxial zinc doped Ga<sub>2</sub>O<sub>3</sub> thin film (Phys. Status Solidi A 5∕2017)
Solar blind photodetector based on epitaxial zinc doped Ga<sub>2</sub>O<sub>3</sub> thin film (Phys. Status Solidi A 5∕2017) Open
Solar blind UV photodetectors (SBPs) with a cutoff wavelength < 290 nm are of great interest for a variety of military and civilian applications. Previously, MgxZn1-xO and AlxGa1−xN alloys have been widely investigated for these applicatio…
View article: Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors Open
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) chann…
View article: Investigation of Donor and Acceptor Ion Implantation in AlN
Investigation of Donor and Acceptor Ion Implantation in AlN Open
AlGaN alloys with high Al composition and AlN based electronic devices are attractive for high voltage, high temperature applications, including microwave power sources, power switches and communication systems. AlN is of particular intere…