A. Reszka
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View article: Cr resonant impurity for studies of band inversion and band offsets in IV-VI semiconductors
Cr resonant impurity for studies of band inversion and band offsets in IV-VI semiconductors Open
Understanding the electronic structure of transition-metal dopants in IV-VI semiconductors is critical for tuning their band structure. We analyze properties of Cr dopant in $Pb_{1-x}Sn_xTe$ and PbSe by magnetic and transport measurements,…
View article: Revealing polytypism in 2D boron nitride with UV photoluminescence
Revealing polytypism in 2D boron nitride with UV photoluminescence Open
Boron nitride exhibits various crystal structures. The subgroup of layered boron nitrides includes several polytypes such as hexagonal (hBN), Bernal (bBN), and rhombohedral (rBN) BN. The latter two are non-centrosymmetric, potentially lead…
View article: Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells
Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells Open
Core‐shell gallium nitride (GaN)‐based nanowires offer noteworthy opportunities for innovation in high‐frequency opto‐ and microelectronics. This work delves deeply into the physical properties of crystalline GaN nanowires with aluminum an…
View article: Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence Open
Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN …
View article: Carbon Oxide Decomposition as a Novel Technique for Ultrahigh Quality ZnO Nanowire Crystallization
Carbon Oxide Decomposition as a Novel Technique for Ultrahigh Quality ZnO Nanowire Crystallization Open
We present a carbon oxide decomposition (COD) method of growing ZnO nanowires (NWs). The “ordinary” carbothermal process of ZnO NW production involves a reduction of ZnO by carbon to the Zn vapor form and the subsequent reaction of the Zn …
View article: Correction to “Synthesis Attempt and Structural Studies of Novel A<sub>2</sub>CeWO<sub>6</sub> Double Perovskites (A<sup>2+</sup> = Ba, Ca) in and outside of Ambient Conditions”
Correction to “Synthesis Attempt and Structural Studies of Novel A<sub>2</sub>CeWO<sub>6</sub> Double Perovskites (A<sup>2+</sup> = Ba, Ca) in and outside of Ambient Conditions” Open
[This corrects the article DOI: 10.1021/acsomega.2c00669.].
View article: Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination
Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination Open
A UV luminescence study of BN shows strong emission from theoretically predicted 1,2-C N C B and 1,4-C N C B color centers (4.1 eV and 3.24 eV). Samples grown at different temperatures reveal a change from localized to delocalized recombin…
View article: Thermoelectric PbTe-CdTe bulk nanocomposite
Thermoelectric PbTe-CdTe bulk nanocomposite Open
The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators is presented. The method tak…
View article: Interaction with Silver Nanowires Disrupts the Excitation Pathways in Upconverting Nanoparticles
Interaction with Silver Nanowires Disrupts the Excitation Pathways in Upconverting Nanoparticles Open
Despite years of research, detailed understanding of the coupling between metallic and upconverting nanoparticles (UCNPs) remains elusive. Although many studies reported modified upconverted luminescence (UCL) intensity and/or lifetime upo…
View article: Role of Metallic Adlayer in Limiting Ge Incorporation into GaN
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN Open
Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth. The role of the adlayer in the incorporation of dopants in GaN is completely unexplored, probably because n-type doping of GaN with Si is relatively st…
View article: CSD 2144348: Experimental Crystal Structure Determination
CSD 2144348: Experimental Crystal Structure Determination Open
An entry from the Inorganic Crystal Structure Database, the world’s repository for inorganic crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely availabl…
View article: CSD 2144347: Experimental Crystal Structure Determination
CSD 2144347: Experimental Crystal Structure Determination Open
An entry from the Inorganic Crystal Structure Database, the world’s repository for inorganic crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely availabl…
View article: CSD 2144349: Experimental Crystal Structure Determination
CSD 2144349: Experimental Crystal Structure Determination Open
An entry from the Inorganic Crystal Structure Database, the world’s repository for inorganic crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely availabl…
View article: CSD 2144350: Experimental Crystal Structure Determination
CSD 2144350: Experimental Crystal Structure Determination Open
An entry from the Inorganic Crystal Structure Database, the world’s repository for inorganic crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely availabl…
View article: Synthesis Attempt and Structural Studies of Novel A<sub>2</sub>CeWO<sub>6</sub> Double Perovskites (A<sup>2+</sup> = Ba, Ca) in and outside of Ambient Conditions
Synthesis Attempt and Structural Studies of Novel A<sub>2</sub>CeWO<sub>6</sub> Double Perovskites (A<sup>2+</sup> = Ba, Ca) in and outside of Ambient Conditions Open
This comprehensive work showcases two novel, rock-salt-type minerals in the form of amphoteric cerium-tungstate double perovskite and ilmenite powders created via a high-temperature solid-state reaction in inert gases. The presented studie…
View article: Alternative Route of Fracturing in GaN Films Formed by Nanowires Coalescence on Si Substrate
Alternative Route of Fracturing in GaN Films Formed by Nanowires Coalescence on Si Substrate Open
Self-assembled GaN nanowires (NWs) were used as buffer structures to grow GaN layers on Si(111). The coalescence of GaN NWs into a planar layer was studied by measuring the crystalline quality and mass density. While the mismatch strain wa…
View article: Strain and lattice vibration mechanisms in GaN-AlxGa1-xN nanowire structures on Si substrate
Strain and lattice vibration mechanisms in GaN-AlxGa1-xN nanowire structures on Si substrate Open
In this work we use Raman scattering and X-ray diffraction (XRD) techniques to examine strain and lattice vibration mechanisms in self-assembled GaN-AlxGa1-xN nanowire (NW) structures grown by plasma-assisted molecular beam epitaxy on Si(1…
View article: Systemic consequences of disorder in magnetically self-organized topological MnBi<sub>2</sub>Te<sub>4</sub>/(Bi<sub>2</sub>Te<sub>3</sub>) <sub>n</sub> superlattices
Systemic consequences of disorder in magnetically self-organized topological MnBi<sub>2</sub>Te<sub>4</sub>/(Bi<sub>2</sub>Te<sub>3</sub>) <sub>n</sub> superlattices Open
MnBi 2 Te 4 /(Bi 2 Te 3 ) n materials system has recently generated strong interest as a natural platform for the realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally d…
View article: Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ Superlattices
Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ Superlattices Open
MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substi…
View article: Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires
Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires Open
ZnTe/CdSe/(Zn, Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor–liquid–solid growth mechanism assisted with gold catalysts. A photoluminescence study of these structures reveals the presence of a…
View article: Stresses caused by Cd and Te inclusions in CdMnTe crystals and their impact on charge carrier transport
Stresses caused by Cd and Te inclusions in CdMnTe crystals and their impact on charge carrier transport Open
We present a defect analysis in Cd and Te inclusion regions within Bridgman-grown Cd0.95Mn0.05Te crystals for nuclear detectors. Crystal growth was performed under Cd- or Te-rich conditions so that Cd and Te inclusions could be investigate…
View article: Finite-difference time-domain simulation of cathodoluminescence patterns of ZnO hexagonal microrods
Finite-difference time-domain simulation of cathodoluminescence patterns of ZnO hexagonal microrods Open
The Finite-Difference Time-Domain (FDTD) numerical simulation method has been applied to interpret cathodoluminecence patterns observed for ZnO nanorods grown by a hydrothermal method. The 3D FDTD simulation reproduced the radial electroma…
View article: Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs
Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs Open
For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of…
View article: GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon Open
We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combinatio…
View article: Erratum: Rocksalt ZnMgO alloys for ultraviolet applications: Origin of band-gap fluctuations and direct-indirect transitions [Phys. Rev. B <b>101</b>, 245202 (2020)]
Erratum: Rocksalt ZnMgO alloys for ultraviolet applications: Origin of band-gap fluctuations and direct-indirect transitions [Phys. Rev. B <b>101</b>, 245202 (2020)] Open
Received 21 July 2020DOI:https://doi.org/10.1103/PhysRevB.102.079903©2020 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasElectronic structureFirst-principles calculationsOptoelectronicsPhysical SystemsAlloysWide ban…