A. Rohatgi
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View article: Passivation and Degradation of Sulfur-Treated Silicon Surfaces for Photovoltaics
Passivation and Degradation of Sulfur-Treated Silicon Surfaces for Photovoltaics Open
Sulfur-based passivation for silicon surfaces using H2S gas is an alternative passivation method to reduce the thermal budget for Si photovoltaics. To understand the impact of the high-quality passivation and an observed passivation effici…
View article: Investigation of Contact Properties and Device Performance for Bifacial Double-Side Textured Silicon Solar Cells With Polysilicon Based Passivating Contacts
Investigation of Contact Properties and Device Performance for Bifacial Double-Side Textured Silicon Solar Cells With Polysilicon Based Passivating Contacts Open
We investigate the impact of the surface morphology on the contact properties of phosphorus doped poly-Si layers. If the poly-Si layer on a textured surface remains intact after high-temperature metallization using a fire-through (FT) silv…
View article: Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells
Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells Open
In this work, we investigate the impact of substrate resistivities on the performance of poly-Si based double-side passivated contact solar cells, featuring high-temperature fire-through contacts to both n-type and p-type poly-Si, where th…
View article: Evaluating the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells
Evaluating the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells Open
A bifacial silicon heterojunction solar cell demands approximately 210 mg usage of silver paste (9 busbars, 24.5%, bifacial, M6 size wafer). Copper is an excellent alternative to silver: 100x cheaper, similar elecvtrical resistivities, and…
View article: Development of APCVD BSG and POCl<sub>3</sub> Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication
Development of APCVD BSG and POCl<sub>3</sub> Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication Open
This paper presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using APCVD-deposited boron silicate glass and ex-situ POCl3 diffusion in a single hig…
View article: Development and Reliability of Screen-Printable Fire-Through Cu Paste for Passivated Contact Solar Cells
Development and Reliability of Screen-Printable Fire-Through Cu Paste for Passivated Contact Solar Cells Open
We present the development of copper (Cu) paste which has been screen printed on Selective Emitter-Passivated Emitter Rear Contact (SE-PERC) solar cells. This paste can also be applied to Tunnel Oxide Passivated Contact (TOPCON) solar cell…
View article: Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells
Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells Open
This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H2S) gas phase reaction and capped by a hydrogenated amorphou…
View article: Method for cleaning a solar cell surface opening made with a solar etch paste
Method for cleaning a solar cell surface opening made with a solar etch paste Open
A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 m…
View article: Methods for passivating silicon devices at low temperature to achieve low interface state density and low recombination velocity while preserving carrier lifetime
Methods for passivating silicon devices at low temperature to achieve low interface state density and low recombination velocity while preserving carrier lifetime Open
A new process has been developed to achieve a very low SiO.sub.x /Si interface state density D.sub.it, low recombination velocity S (5 ms) for oxides deposited on silicon substrates at low temperature. The technique involves direct plasma-…
View article: Boron diffusion in silicon devices
Boron diffusion in silicon devices Open
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of t…
View article: Method for formation of high quality back contact with screen-printed local back surface field
Method for formation of high quality back contact with screen-printed local back surface field Open
A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 m…
View article: Arrangement, Dopant Source, And Method For Making Solar Cells
Arrangement, Dopant Source, And Method For Making Solar Cells Open
Disclosed is an arrangement, dopant source and method used in the fabrication of photocells that minimize handling of cell wafers and involve a single furnace step. First, dopant sources are created by depositing selected dopants onto both…
View article: Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells
Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells Open
A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was stud…
View article: Dopant diffused Si surface passivation by H<sub>2</sub>S gas reaction and quinhydrone-methanol treatment
Dopant diffused Si surface passivation by H<sub>2</sub>S gas reaction and quinhydrone-methanol treatment Open
Phosphorus (n+) and boron (p+) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H2S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified b…
View article: Technology Development for ≥ 22.5% Efficient p-PERC Solar Cells
Technology Development for ≥ 22.5% Efficient p-PERC Solar Cells Open
The overall objective of this program is to achieve ≥ 22.5 % bifacial p-type cell efficiencies by developing and implementing optimized homogeneous phosphorus (P) emitter on the front and tunnel oxide passivated boron (B) doped poly-Si con…
View article: Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation
Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation Open
The efficiency potential of double-side tunnel oxide passivated contact (DS-TOPCon) solar cells is limited by parasitic absorption in the front poly-Si layer, despite excellent passivation and high VOC. The use of patterned poly-Si only un…
View article: Development of a co-anneal process for double-side TOPCon precursor fabricated by ex-situ POCI3 and APCVD boron diffusion
Development of a co-anneal process for double-side TOPCon precursor fabricated by ex-situ POCI3 and APCVD boron diffusion Open
The aim of this study was to develop a simple and industrially attractive co-anneal process to fabricate a high-quality DS-TOPCon precursor with textured n-TOPCon on front and planar p- TOPCon on rear by ex-situ POCI3 and APCVD boron diffu…
View article: Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell
Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell Open
The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for…
View article: Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction
Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction Open
An efficient surface defect passivation is observed by reacting clean Si in a dilute hydrogen sulfide–argon gas mixture (<5% H 2 S in Ar) for both n-type and p-type Si wafers with planar and textured surfaces. Surface recombination velocit…
View article: Design, Optimization, and In-Depth Understanding of Front and Rear Junction Double-Side Passivated Contacts Solar Cells
Design, Optimization, and In-Depth Understanding of Front and Rear Junction Double-Side Passivated Contacts Solar Cells Open
In this article, detailed numerical modeling is performed for front junction (FJ) and rear junction (RJ) n-type Si solar cells with screen-printed double-side poly-Si based tunnel oxide passivated contacts (TOPCon). A roadmap for efficienc…
View article: Investigation on Light Stability of Injected Charge in α-SiN<sub>x</sub>: H by Plasma Charge Injection Technology
Investigation on Light Stability of Injected Charge in α-SiN<sub>x</sub>: H by Plasma Charge Injection Technology Open
The plasma charge injection technology reported earlier can be a low-cost alternative to the Al2O3 passivation technology. The charge stability under sunlight exposure is a key concern. We investigated the light-induced loss of injected ch…
View article: Modeling and Understanding of Rear Junction Double-Side Passivated Contact Solar Cells with Selective Area TOPCon on Front
Modeling and Understanding of Rear Junction Double-Side Passivated Contact Solar Cells with Selective Area TOPCon on Front Open
Device modeling is performed to propose > 25% efficient industry-compatible rear junction double-side passivated contacts solar cell structure with full area p-TOPCon on the rear and selective area n-TOPCon under the front grid pattern (se…