A. Stesmans
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View article: Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping
Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping Open
There has been tremendous research effort in hunting for novel two-dimensional (2D) materials with exotic properties, showing great promise for various potential applications. Here, we report the findings about a new hexagonal phase of 2D …
View article: Band alignment at interfaces of two-dimensional materials: internal photoemission analysis
Band alignment at interfaces of two-dimensional materials: internal photoemission analysis Open
The article overviews experimental results obtained by applying internal photoemission (IPE) spectroscopy methods to characterize electron states in single- or few-monolayer thick two-dimensional materials and at their interfaces. Several …
View article: First-Principles Study of the Contact Resistance at 2D Metal/2D Semiconductor Heterojunctions
First-Principles Study of the Contact Resistance at 2D Metal/2D Semiconductor Heterojunctions Open
The high contact resistance at metal/two-dimensional (2D) semiconductor junctions is a major issue for the integration of 2D materials in nanoelectronic devices. We review here recent theoretical results on the contact resistance at latera…
View article: Analysis of Transferred MoS<sub>2</sub> Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation
Analysis of Transferred MoS<sub>2</sub> Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation Open
A low-temperature multi-frequency electron spin resonance (ESR) study has been carried out on 1, 3.5, and 6 layer thick MoS 2 films, grown by metal organic vapor deposition (MOCVD) and subsequently transferred on SiO 2 /Si. This reveals th…
View article: Contact resistance at graphene/MoS2 lateral heterostructures
Contact resistance at graphene/MoS2 lateral heterostructures Open
The contact resistance at two-dimensional graphene/MoS2 lateral heterojunctions is theoretically studied, using first-principles simulations based on density functional theory and the nonequilibrium Green's function method. The computed co…
View article: Contact Resistance at MoS<sub>2</sub>-Based 2D Metal/Semiconductor Lateral Heterojunctions
Contact Resistance at MoS<sub>2</sub>-Based 2D Metal/Semiconductor Lateral Heterojunctions Open
sponsorship: We are grateful for financial support from the KU Leuven Research Funds (project C14/17/080 to M.H.) as well as from the European Commission (project "2DFun", an ERA-NET project in the framework of the Graphene Flagship, to V.…
View article: Aryl-viologen pentapeptide self-assembled conductive nanofibers
Aryl-viologen pentapeptide self-assembled conductive nanofibers Open
We have fabricated self-assembled oligopeptide-based semiconductive nanofibers, where the electron transfer capabilities of redox-active viologens are maximized through β-sheet interactions.
View article: Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism
Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism Open
© 2018 American Chemical Society. When two-dimensional (2D) group-VI transition metal dichalcogenides such as tungsten disulfide (WS 2 ) are grown by atomic layer deposition (ALD) for atomic growth control at low deposition temperatures (≤…
View article: Structural Properties of Al–O Monolayers in SiO<sub>2</sub> on Silicon and the Maximization of Their Negative Fixed Charge Density
Structural Properties of Al–O Monolayers in SiO<sub>2</sub> on Silicon and the Maximization of Their Negative Fixed Charge Density Open
Al2O3 on Si is known to form an ultrathin interfacial SiO2 during deposition and subsequent annealing, which creates a negative fixed charge ( Qfix) that enables field-effect passivation and low surface recombination velocities in Si solar…
View article: Nitrogen acceptor in 2H-polytype synthetic MoS2 assessed by multifrequency electron spin resonance
Nitrogen acceptor in 2H-polytype synthetic MoS2 assessed by multifrequency electron spin resonance Open
Electron spin resonance (ESR) study on 2H-polytype synthetic MoS2 revealed the N acceptor dopants as being characterized by a spectrum of axial symmetry [g∥ = 2.032(2); g⊥ = 2.270(2)], typical for a hole-type center in MoS2. The N impuriti…
View article: Ferromagnetism in two-dimensional hole-doped SnO
Ferromagnetism in two-dimensional hole-doped SnO Open
Hole-doped monolayer SnO has been recently predicted to be a ferromagnetic material, for a hole density typically above 5x1013/cm2. The possibility to induce a hole-doped stable ferromagnetic order in this two-dimensional material, either …
View article: Internal Photoemission Metrology of Inhomogeneous Interface Barriers
Internal Photoemission Metrology of Inhomogeneous Interface Barriers Open
Interfaces of heterogeneous solids, ranging from polycrystalline materials to composites, are frequently encountered in nanotechnology. Electron transport in these materials and across their interfaces critically depends on the energy barr…
View article: Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission Open
Electron band alignment at interfaces of SiO2 with directly synthesized few-monolayer (ML) thin semiconducting MoS2 films is characterized by using field-dependent internal photoemission of electrons from the valence band of MoS2 into the …
View article: Erratum to: Silicene on non-metallic substrates: Recent theoretical and experimental advances
Erratum to: Silicene on non-metallic substrates: Recent theoretical and experimental advances Open
The name of the second author in the original version of this article was unfortunately wrongly written on page 1169. Instead of Kostantina Iordanidou It should read Konstantina Iordanidou
View article: ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS2: Dopant level and activation
ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS2: Dopant level and activation Open
Multi-frequency electron spin resonance (ESR) study of p-type synthetic 2H MoS2 reveals a previously unreported signal of axial-symmetry [g// = 2.032(2); g⊥ = 2.270(2)] characteristic for a hole-type center in MoS2. It is identified as ori…
View article: Silicene on non-metallic substrates: Recent theoretical and experimental advances
Silicene on non-metallic substrates: Recent theoretical and experimental advances Open
© 2018, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature. Silicene, the silicon counterpart of graphene, has been successfully grown on metallic substrates such as Ag(111), ZrB2(0001), and Ir(111) surface…
View article: On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films Open
In situ doped epitaxial Si:P films with P concentrations >1 × 1021 at./cm3 are suitable for source-drain stressors of n-FinFETs. These films combine the advantages of high conductivity derived from the high P doping with the creation of…
View article: Interaction of silicene and germanene with non-metallic substrates
Interaction of silicene and germanene with non-metallic substrates Open
By using first-principles simulations, we investigate the interaction of silicene and germanene with various non-metallic substrates. We first consider weak van der Waals interactions between the 2D layers and dichalcogenide substrates, li…
View article: Characterization of thin films of the solid electrolyte Li<sub>x</sub>Mg<sub>1−2x</sub>Al<sub>2+x</sub>O<sub>4</sub> (x = 0, 0.05, 0.15, 0.25)
Characterization of thin films of the solid electrolyte Li<sub>x</sub>Mg<sub>1−2x</sub>Al<sub>2+x</sub>O<sub>4</sub> (x = 0, 0.05, 0.15, 0.25) Open
RF-sputtered thin films of spinel LixMg1−2xAl2+xO4 were investigated for use as solid electrolyte in Li-ion batteries.