A. Tataroğlu
YOU?
Author Swipe
View article: Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling
Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling Open
This study presents a comprehensive analysis of the temperature-dependent electrical behavior of Au/Ti/AlN/n-Si Schottky diode using both experimental measurements and theoretical modeling. The key diode parameters, namely the ideality fac…
View article: Analysis of the structural and optical characteristics of ZnSe thin films as interface layer
Analysis of the structural and optical characteristics of ZnSe thin films as interface layer Open
This research reveals the results of a comprehensive analysis of the optical and structural features of zinc selenide (ZnSe) thin film. The studied film was synthesized using the thermal evaporation method after preparation on the glass su…
View article: The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities
The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities Open
Five samples were fabricated to obtain a diode with a PVA interface, both with and without graphene doping at different rates with high rectification in the dark. The electrospinning method was employed to apply the doped and undoped solut…
View article: Structural, morphological, optical and electrical characterization of MgO thin films grown by sputtering technique on different substrates
Structural, morphological, optical and electrical characterization of MgO thin films grown by sputtering technique on different substrates Open
Magnesium Oxide (MgO) thin film structures were deposited on glass and n-Si substrates by means of RF magnetron sputtering technique. Structural, morphological, optical characteristics of MgO thin film were determined by XRD, AFM and UV–Vi…
View article: Impact of TiO2, ZnO, and Methylene Blue Doping on the Dielectric anisotropy of planar 8CB nematic liquid crystal
Impact of TiO2, ZnO, and Methylene Blue Doping on the Dielectric anisotropy of planar 8CB nematic liquid crystal Open
In this study, the impact on the dielectric properties of 8CB with the dispersion of TiO2, ZnO, and methylene blue (0% to 5%) is examined. Employing capacitance–voltage (C–V) measurements across frequencies ranging from 10 kHz to 2 MHz, we…
View article: Analysis of the optical and electronic characteristics of Al/NiPc complex/p-Si diode
Analysis of the optical and electronic characteristics of Al/NiPc complex/p-Si diode Open
The primary goal of this work is to explore how the introduction of the Nickel (II) phthalocyanine tetrasulfonic acid tetrasodium salt (NiTsPc) organic interlayer influences the performance of conventional metal/semiconductor diodes. First…
View article: Structural and Optical Properties of Interfacial InSe Thin Film
Structural and Optical Properties of Interfacial InSe Thin Film Open
This study presents a comprehensive investigation of the optical and structural characteristics of the indium selenide (InSe) film prepared on a glass substrate. The structural characteristics of the InSe film were analyzed using character…
View article: Influence of ionizing radiation on admittance measurements of Au/TiO2/n-Si (MIS) capacitor
Influence of ionizing radiation on admittance measurements of Au/TiO2/n-Si (MIS) capacitor Open
This study aimed to investigate the influence of ionizing radiation on the admittance measurements of Titanium dioxide (TiO 2 )-based metal-insulator-semiconductor (MIS) capacitor. The capacitor was irradiated to a cumulative dose of 100 k…
View article: High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S:DLC)/p-Si (MIS) structures
High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S:DLC)/p-Si (MIS) structures Open
Complex dielectric ( ε * = ε′ − jε″ )/electric modulus ( M * = M′ + jM ″), loss tangent (tan δ ), and ac conductivity ( σ ac ) properties of Au/(S-DLC)/p-Si structures were investigated by utilizing admittance/impedance measurements betwee…
View article: Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes
Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes Open
This study investigates the fabrication and performance analysis of Al/CuO:LaB6/p-Si/Al diodes with CuO-doped LaB6 interlayer films of varying concentrations (1%, 5%, and 10%). Experimental evidence demonstrates the limitations of 0% CuO d…
View article: Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device
Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device Open
Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was…
View article: Optical and Dielectric Behavior of Al/Cro3/P-Si Device
Optical and Dielectric Behavior of Al/Cro3/P-Si Device Open
View article: The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes Open
View article: Properties of AlN thin film as dielectric for Au/Ti/n-Si device
Properties of AlN thin film as dielectric for Au/Ti/n-Si device Open
The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on n-Si substrate was deposited by a hydride vapor ph…
View article: Correction to: Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor
Correction to: Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor Open
View article: DIELECTRIC PROPERTIES OF GRADED AND NON-GRADED InGaN/GaN MQWs
DIELECTRIC PROPERTIES OF GRADED AND NON-GRADED InGaN/GaN MQWs Open
In this study, dielectric properties of graded and non-graded InGaN/GaN multi quantum wells (MQWs), grown on sapphire(Al2O3) wafer by Metal Organic Chemical Vapor Deposition (MOCVD) technique, are investigated. In order to notice graded la…
View article: Dielectric Properties of Graded and Non-Graded InGaN/GaN MQWs
Dielectric Properties of Graded and Non-Graded InGaN/GaN MQWs Open
In this study, dielectric properties of graded and non-graded InGaN/GaN multi quantum wells (MQWs), grown on sapphire(Al2O3) wafer by Metal Organic Chemical Vapor Deposition (MOCVD) technique, are investigated. In order to notice graded la…
View article: Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode
Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode Open
Photo-response properties of the Au/(CoFe 2 O 4 -PVP)/n-Si (MPS) diode were investigated using current-voltage (I-V) measurements achieved under dark and various illumination conditions. The experimental results showed that the MPS diode h…
View article: Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode
Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode Open
We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer de…
View article: Electrical characterization of MIS diode prepared by magnetron sputtering
Electrical characterization of MIS diode prepared by magnetron sputtering Open
TiO 2 thin film has been prepared on n -type Si wafer to fabricate an Au/TiO 2 /n-Si (MIS) diode by RF magnetron sputtering technique. The current-voltage ( I - V ) and capacitance-voltage ( C - V ) measurements of the diode have been …
View article: Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound
Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound Open
View article: Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures
Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures Open
The electrical properties of Au/Bi4Ti3O12/SnO2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/ω-V measurements. The results indicate structural disordering, presence of the interface states in the BTO …
View article: Analysis of density and time constant of interface states of MIS device by conductance method
Analysis of density and time constant of interface states of MIS device by conductance method Open
The density and time constant of interface states of Au/Si 3 N 4 /n-Si (MIS) device have been analyzed by conductance method. The capacitance and conductance measurements of the device have been performed at various frequencies in the rang…
View article: CCDC 1451191: Experimental Crystal Structure Determination
CCDC 1451191: Experimental Crystal Structure Determination Open
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available …