A. Willinger
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View article: On the relationship between noise squeezing and Rabi oscillations in active quantum dot ensembles
On the relationship between noise squeezing and Rabi oscillations in active quantum dot ensembles Open
Squeezed light is usually generated using passive nonlinear materials. Semiconductor lasers and optical amplifiers (SOAs) also offer nonlinearities but they differ in that they add amplified spontaneous emission (ASE). Squeezing to below t…
View article: On the relationship between electrical and electro-optical characteristics in vertical cavity surface emitting lasers for chip scale Rb atomic clocks
On the relationship between electrical and electro-optical characteristics in vertical cavity surface emitting lasers for chip scale Rb atomic clocks Open
We report on a comprehensive study of the electrical and electro-optical properties of 795 nm vertical cavity surface emitting lasers (VCSELs) designed for chip scale Rb atomic clocks. We highlight several key findings including the observ…
View article: Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates
Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates Open
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light sou…
View article: Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates
Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates Open
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light sou…
View article: On the relation between electrical and electro-optical properties of tunnelling injection quantum dot lasers
On the relation between electrical and electro-optical properties of tunnelling injection quantum dot lasers Open
We present a comprehensive study of the temperature dependent electronic and optoelectronic properties of a tunnelling injection quantum dot laser. The optical power-voltage ( P opt – V ) characteristics are shown to be correlated with the…
View article: High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths
High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths Open
We describe the fabrication process and properties of an InP based quantum dot (QD) laser structure grown on a 5° off-cut silicon substrate. Several layers of QD-based dislocation filters embedded in GaAs and InP were used to minimize the …
View article: Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures Open
We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain wavelength at a rate of 0.78 nm/K is…
View article: Phase Sensitive Parametric Interactions in a <inline-formula> <tex-math notation="LaTeX"> $Ga_{0.5}In_{0.5}P$</tex-math> </inline-formula> Photonic Crystal Waveguide
Phase Sensitive Parametric Interactions in a Photonic Crystal Waveguide Open
We report phase sensitive amplification in a long, dispersion engineered photonic crystal waveguide which has a flattened dispersion profile. A signal degenerate configuration with pulsed pumps whose total peak power is only yields a ph…
View article: Phase sensitive parametric interactions in a $Ga_{0.5}In_{0.5}P$ photonic crystal waveguide
Phase sensitive parametric interactions in a $Ga_{0.5}In_{0.5}P$ photonic crystal waveguide Open
We report phase sensitive amplification in a 1.5mm long, $Ga_{0.5}In_{0.5}P$ dispersion engineered photonic crystal waveguide which has a flattened dispersion profile. A signal degenerate configuration with pulsed pumps whose total peak po…