Ailish Wratten
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View article: Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects
Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects Open
Understanding surface passivation arising from aluminium oxide (Al2O3) films is of significant relevance for silicon-based solar cells and devices that require negligible surface recombination. This study aims to understand the competing b…
View article: Hafnium oxide: A thin film dielectric with controllable etch resistance for semiconductor device fabrication
Hafnium oxide: A thin film dielectric with controllable etch resistance for semiconductor device fabrication Open
Thin film dielectrics are ubiquitous in the manufacture of electronic devices and are frequently deposited and etched away at various stages of device fabrication. We demonstrate that hafnium oxide (HfO2) thin films grown via atomic layer …
View article: Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon
Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon Open
Production of a temporally stable chemically enhanced ultra-thin HfO 2 interlayer with excellent passivation for use in photovoltaic passivating contacts.
View article: SiN<sub>x</sub> and AlO<sub>x</sub> Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells
SiN<sub>x</sub> and AlO<sub>x</sub> Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells Open
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable h…
View article: Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films
Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films Open
We have studied the mechanisms underpinning effective surface passivation of silicon with hafnium oxide (HfO 2 ) thin films grown via atomic layer deposition (ALD). Plasma-enhanced ALD with O 2 plasma and a tetrakis(dimethylamido)hafnium p…
View article: Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators
Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators Open
For a diverse range of semiconductor devices, the charge carrier lifetime is an essential characteristic. However, the carrier lifetime is difficult to control, as it is usually determined by a variety of recombination processes. For indir…
View article: Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics
Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics Open
Surface passivating thin films are crucial for limiting the electrical losses during charge carrier collection in silicon photovoltaic devices. Certain dielectric coatings of more than 10 nm provide excellent surface passivation, and ultra…
View article: Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy
Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy Open
Photoexcited muon spin spectroscopy (photo-μSR) is used to study excess charge carrier lifetimes in silicon. Experiments are performed on silicon wafers with very high bulk lifetimes with the surface passivation conditions intentionally mo…