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View article: Fiber-to-chip grating coupler on 4H-silicon-carbide-on-insulator platform with high-efficiency
Fiber-to-chip grating coupler on 4H-silicon-carbide-on-insulator platform with high-efficiency Open
A fiber-to-chip grating coupler for transverse electric (TE) polarization was demonstrated on the emerging 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, with the advantages of high coupling efficiency, low back-reflection to the wav…
View article: Deterministic and Scalable Coupling of Single 4H-SiC Spin Defects into Bullseye Cavities
Deterministic and Scalable Coupling of Single 4H-SiC Spin Defects into Bullseye Cavities Open
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI (…
View article: Strain Enhanced Spin Readout Contrast in Silicon Carbide Membranes
Strain Enhanced Spin Readout Contrast in Silicon Carbide Membranes Open
Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum b…
View article: A hybrid single quantum dot coupled cavity on a CMOS-compatible SiC photonic chip for Purcell-enhanced deterministic single-photon emission
A hybrid single quantum dot coupled cavity on a CMOS-compatible SiC photonic chip for Purcell-enhanced deterministic single-photon emission Open
View article: Stable Soliton Microcomb Generation in X-cut Lithium Tantalate via Thermal-Assisted Photorefractive Suppression
Stable Soliton Microcomb Generation in X-cut Lithium Tantalate via Thermal-Assisted Photorefractive Suppression Open
Chip-based soliton frequency microcombs combine compact size, broad bandwidth, and high coherence, presenting a promising solution for integrated optical telecommunications, precision sensing, and spectroscopy. Recent progress in ferroelec…
View article: Fabrication of 4-Inch Single-Crystalline Inp Thin Film on Si Substrate by Ion-Cutting Technique with Wafer Bonding at Elevated Temperature
Fabrication of 4-Inch Single-Crystalline Inp Thin Film on Si Substrate by Ion-Cutting Technique with Wafer Bonding at Elevated Temperature Open
View article: Room-temperature waveguide integrated quantum register in a semiconductor photonic platform
Room-temperature waveguide integrated quantum register in a semiconductor photonic platform Open
Quantum photonic integrated circuits are reshaping quantum networks and sensing by providing compact, efficient platforms for practical quantum applications. Despite continuous breakthroughs, integrating entangled registers into photonic d…
View article: Wafer-scale fabrication of single-crystalline calcium fluoride thin-film on insulator by ion-cutting
Wafer-scale fabrication of single-crystalline calcium fluoride thin-film on insulator by ion-cutting Open
Developing bulk materials into thin-films not only enables multiple physical fields to interact strongly within a smaller volume but also enhances the stability, scalability, and integrability of the system. This transformation has been wi…
View article: Current transport mechanism of lateral Schottky barrier diodes on <b>β</b>-Ga2O3/SiC structure with atomic level interface
Current transport mechanism of lateral Schottky barrier diodes on <b>β</b>-Ga2O3/SiC structure with atomic level interface Open
Heterogeneous integration of β-Ga2O3 on highly thermal conductive SiC substrate by the ion-cutting technique is an effective solution to break the heat-dissipation bottleneck of β-Ga2O3 power electronics. In order to acquire high-quality β…
View article: Wafer-Scale Fabrication of Single-Crystalline Calcium Fluoride Thin-Film on Insulator by Ion-Cutting
Wafer-Scale Fabrication of Single-Crystalline Calcium Fluoride Thin-Film on Insulator by Ion-Cutting Open
View article: Room-Temperature entangled quantum processor on integrated semiconductor photonics platform
Room-Temperature entangled quantum processor on integrated semiconductor photonics platform Open
The rise of the 4H-silicon-carbide-on-insulator (SiCOI) platform marks a promising pathway towards the realization of monolithic quantum photonic networks. However, the challenge of establishing room-temperature entangled registers on thes…
View article: Superconducting nanowire single photon detector on 4H-SiC substrates with saturated quantum efficiency
Superconducting nanowire single photon detector on 4H-SiC substrates with saturated quantum efficiency Open
On-chip single photon detection is crucial for implementing on-chip quantum communication, quantum simulation, and calculation. Superconducting nanowire single-photon detectors (SNSPDs) have become one of the essential techniques to achiev…
View article: Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga<sub>2</sub>O<sub>3</sub>/Si Schottky Barrier Diodes
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga<sub>2</sub>O<sub>3</sub>/Si Schottky Barrier Diodes Open
Heterogeneous integration of -Ga2O3 with Si substrate is considered as an effective and low-cost technology for the thermal management of -Ga2O3 electrical devices. In this work, an isotype heterojunction of n-Ga2O3/n+-Si (Ga2O3/Si) was fa…
View article: Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform
Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform Open
View article: Silicon carbide for integrated photonics
Silicon carbide for integrated photonics Open
Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity…
View article: Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics
Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics Open
Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafe…
View article: Silicon carbide for integrated photonics
Silicon carbide for integrated photonics Open
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
View article: Thermal oxidation assisted chemical mechanical polishing for low-loss 4H-SiC integrated photonic devices
Thermal oxidation assisted chemical mechanical polishing for low-loss 4H-SiC integrated photonic devices Open
Contribution to conference. Abstract from the 47th Micro and Nano Engineering Conference 2021, Turin, 20/09/2021 - 23/09/2021.
View article: Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms
Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms Open
4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important rol…
View article: High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics
High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics Open
View article: Polarization and spatial mode dependent four-wave mixing in a 4H-silicon carbide microring resonator
Polarization and spatial mode dependent four-wave mixing in a 4H-silicon carbide microring resonator Open
We report four-wave mixing with different polarization and spatial modes in a single 4H-silicon carbide photonic device. Our device shows great potential to perform high-dimensional multiplexing for optical communication and high-dimension…
View article: An Ultrahigh-Q Microresonator on 4H-silicon-carbide-on-insulator Platform for Multiple Harmonics, Cascaded Raman Lasing and Kerr Comb Generations
An Ultrahigh-Q Microresonator on 4H-silicon-carbide-on-insulator Platform for Multiple Harmonics, Cascaded Raman Lasing and Kerr Comb Generations Open
The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of …
View article: Nano-engineering unlocks the potential of SiC for photonics
Nano-engineering unlocks the potential of SiC for photonics Open
View article: Room-temperature coherent control of implanted defect spins in silicon carbide
Room-temperature coherent control of implanted defect spins in silicon carbide Open
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken …
View article: Room-temperature coherent control of implanted defect spins in silicon carbide
Room-temperature coherent control of implanted defect spins in silicon carbide Open
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken …
View article: Engineering of self-rectifying filamentary resistive switching in LiNbO3 single crystalline thin film via strain doping
Engineering of self-rectifying filamentary resistive switching in LiNbO3 single crystalline thin film via strain doping Open
View article: Comparative study of the ion-slicing mechanism of Y-cut LiNbO3
Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 Open
Ion-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different o…
View article: High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator
High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator Open
Silicon carbide (SiC) exhibits promising material properties for nonlinear integrated optics. We report on a SiC-on-insulator platform based on crystalline 4H-SiC and demonstrate high-confinement SiC microring resonators with sub-micron wa…
View article: Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate
Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate Open
Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (11…