Alain Moussa
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View article: Oriented Two-dimensional Semiconducting Crystals on Amorphous Dielectrics by Selective Artificial Epitaxy
Oriented Two-dimensional Semiconducting Crystals on Amorphous Dielectrics by Selective Artificial Epitaxy Open
Defective grain boundaries form in semiconductors when deposition approaches do not control crystal grain orientation. This poses existential limitations to fabricating highly performing semiconductor devices with two-dimensional semicondu…
View article: Wafer-scale characterization for two-dimensional material layers
Wafer-scale characterization for two-dimensional material layers Open
Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology techniques being intensively used to characterize 2D materials on small coupons, the developmen…
View article: E-beam metrology and line local critical dimension uniformity of thin dry resist films for high numerical aperture extreme ultraviolet lithography
E-beam metrology and line local critical dimension uniformity of thin dry resist films for high numerical aperture extreme ultraviolet lithography Open
sponsorship: Part of this manuscript has been previously published in the SPIE Conference Proceedings: Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 1249612 (27 April 2023) 10.1117/12.2658280.13 We would like to ackn…
View article: Chemically amplified resist CDSEM metrology exploration for high NA EUV lithography
Chemically amplified resist CDSEM metrology exploration for high NA EUV lithography Open
Background: The chemically amplified resist (CAR) has been the workhorse of lithography for the past few decades. During the evolution of projection lithography to extreme ultraviolet lithography (EUVL), a continuous reduction in feature s…
View article: Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe
Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe Open
This paper extends the applicability of the micro four‐point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, …
View article: Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching
Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching Open
In this work, we report on wet-chemical defect revealing in InP fin structures relevant for device manufacturing. Both HCl and HBr solutions were explored using bulk InP as a reference. A distinct difference in pit morphology was observed …