Albert Chin
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View article: SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current
SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current Open
Using novel SiO2 surface passivation and ultraviolet (UV) light anneal, a 12 nm thick SnO p-type FET (pFET) shows hole effective mobilities (µeff) of more than 100 cm2/V·s and 31.1 cm2/V·s at hole densities (Qh) of 1 × 1011 and 5 × 1012 cm…
View article: Identification and Validation of Cyclic Peptides with Mucin-Selective, Location-Specific Binding in the Gastrointestinal Tract
Identification and Validation of Cyclic Peptides with Mucin-Selective, Location-Specific Binding in the Gastrointestinal Tract Open
Oral drug delivery is a widely preferred method of drug administration due to its ease of use and convenience for patients. Localization of drug release in the gastrointestinal (GI) tract is important to treat localized diseases and maximi…
View article: Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO2/TiN Using Nanosecond Laser and Surface Plasma Effect
Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO2/TiN Using Nanosecond Laser and Surface Plasma Effect Open
Rapid thermal annealing (RTA) has been widely used in semiconductor device processing. However, the rise time of RTA, limited to the millisecond (ms) range, is unsuitable for advanced nanometer-scale electronic devices. Using sub-energy ba…
View article: Remarkably High 67.8 Dielectric Constant and 75 fF/μm2 Ni/ZrO2/TiN Capacitance Density Using Sub-Energy Bandgap Nanosecond Laser and Surface Plasma Effect
Remarkably High 67.8 Dielectric Constant and 75 fF/μm2 Ni/ZrO2/TiN Capacitance Density Using Sub-Energy Bandgap Nanosecond Laser and Surface Plasma Effect Open
Rapid thermal annealing (RTA) has been widely used in the process of semiconductor devices. However, the rise time of RTA is limited by millisecond (ms) that is not suitable for advanced nanometre scale electron devices. Using sub-energy b…
View article: Impact of UV annealing on the hole effective mobility in SnO pFET
Impact of UV annealing on the hole effective mobility in SnO pFET Open
Using ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric, nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/V-s at low hole density (Qh) to 13.38 cm2/V-s at 5 × 1012 cm-2 Qh, compared to t…
View article: Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET Open
This work reports the first nanocrystalline SnON (7.6% nitrogen content) nanosheet n-type Field-Effect Transistor (nFET) with the transistor’s effective mobility (µeff) as high as 357 and 325 cm2/V-s at electron density (Qe) of 5 × 1012 cm…
View article: Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5-nm Quasi-Two-Dimensional SnON nFET
Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5-nm Quasi-Two-Dimensional SnON nFET Open
This work reports the first nanocrystalline SnON (7.6 % Nitrogen content) n-type nanosheet Field-Effect Transistor (nFET) with transistor’s effective mobility (µeff) as high as 357 and 325 cm2/V-s at electron density (Qe) of 5×1012 cm-2 an…
View article: Copolymer membrane for high-dose chemotherapy delivery during transarterial chemoembolization
Copolymer membrane for high-dose chemotherapy delivery during transarterial chemoembolization Open
Described herein is a porous copolymer membrane composed of poly(styrene sulfonate)-block-polyethylene-block-poly(styrenesulfonate) for use in the absorption of doxorubicin, and a chemofiltration catheter incorporating the membrane for use…
View article: Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor
Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor Open
High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than…
View article: Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation
Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation Open
Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantati…
View article: Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer Open
Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a con…
View article: High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer
High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer Open
Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFT…
View article: High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence
High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence Open
All-nonmetal resistive random access memory (RRAM) with a N + –Si/SiN x /P + –Si structure was investigated in this study. The device performance of SiN x developed using physical vapor deposition (PVD) was significantly better than that o…
View article: Realization of an IGBT Gate Driver With Dualphase Turn-On/Off Gate Control
Realization of an IGBT Gate Driver With Dualphase Turn-On/Off Gate Control Open
Adding passive components in a conventional IGBT gate driver is a simple method to reduce transient current/voltage spikes during switching, but the extra devices and power loss make them less attractive. Alternatively, active gate drivers…
View article: Silicon Nanocrystals and Amorphous Nanoclusters in SiO<sub>x</sub> and SiN<sub>x</sub>: Atomic, Electronic Structure, and Memristor Effects
Silicon Nanocrystals and Amorphous Nanoclusters in SiO<sub>x</sub> and SiN<sub>x</sub>: Atomic, Electronic Structure, and Memristor Effects Open
Semiconductor nanocrystals in dielectric films are interesting from fundamental aspect, because quantum-size effects in them appear even at room temperature, so such objects can be called as ‚Äúquantum dots‚Äù. Silicon nanocrystals and amo…