Alex Bogan
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Bidirectional nuclear polarization through electric dipole spin resonance enabled by spin-orbit interaction in a single hole planar quantum dot device Open
Spin exchange between confined holes and nuclei has been demonstrated for zero-dimensional quantum dots by optical techniques but has not been observed for gated planar structures. Here, enabled by strong spin-orbit interaction, and under …
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe <sub>2</sub> Open
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between spin and valley degrees of freedom. Their strong spin-orbit interaction and broken inversion symmetry lead to the spin…
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$ Open
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within th…
Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon Open
With the emergence of the quantum computing era, the spin physics of engineered semiconductor materials with large and tuneable effective g* -factor, which is a measure of the interaction between the magnetic field and the spin of the part…
View article: Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2
Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2 Open
Among quantum devices based on 2D materials, gate-defined quantum confined 1D channels are much less explored, especially in the high-mobility regime where many-body interactions play an important role. We present the results of measuremen…
Coherence Characteristics of a GaAs Single Heavy-Hole Spin Qubit Using a Modified Single-Shot Latching Readout Technique Open
We present an experimental study of the coherence properties of a single heavy-hole spin qubit formed in one quantum dot of a gated GaAs/AlGaAs double quantum dot device. We use a modified spin-readout latching technique in which the secon…
View article: Holes Outperform Electrons in Group IV Semiconductor Materials
Holes Outperform Electrons in Group IV Semiconductor Materials Open
A record‐high mobility of holes, reaching 4.3 × 10 6 cm 2 V −1 s −1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the developme…
Coherence Characteristics of a GaAs Single Heavy-Hole Spin Qubit Using a Modified Single-Shot Latching Readout Technique Open
We present an experimental study of the coherence properties of a single heavy-hole spin qubit formed in one quantum dot of a gated GaAs/AlGaAs double quantum dot device. We use a modified spin-readout latching technique in which the secon…
View article: Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2
Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2 Open
Among quantum devices based on 2D materials, gate-defined quantum confined 1D channels are much less explored, especially in the high mobility regime where many body interactions play an important role. We present results of measurements a…
View article: Characterization of dot-specific and tunable effective <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math> factors in a GaAs/AlGaAs double quantum dot single-hole device
Characterization of dot-specific and tunable effective factors in a GaAs/AlGaAs double quantum dot single-hole device Open
Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we o…
View article: Charge detection using a WSe$_2$ van der Waals heterostructure
Charge detection using a WSe$_2$ van der Waals heterostructure Open
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated nan…
View article: Tuning dot-specific effective g-factors in a GaAs/AlGaAs double quantum dot device confining a single hole.
Tuning dot-specific effective g-factors in a GaAs/AlGaAs double quantum dot device confining a single hole. Open
to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.
Spin-orbit enabled quantum transport channels in a two-hole double quantum dot Open
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to ma…
View article: Single-hole couplings in GaAs/AlGaAs double dots probed with transport and EDSR spectroscopy
Single-hole couplings in GaAs/AlGaAs double dots probed with transport and EDSR spectroscopy Open
We report a detailed study of the tunnel barriers within a single-hole GaAs/AlGaAs double quantum dot device (DQD). For quantum information applications as well as fundamental studies, careful tuning and reliable measurements of the barrie…
Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction Open
There is rapidly expanding interest in exploiting the spin of valence-band holes rather than conduction-band electrons for spin qubit semiconductor circuits composed of coupled quantum dots. The hole platform offers stronger spin–orbit int…
View article: Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot
Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot Open
Electrical tunability of the $$g$$ -factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This…
Landau-Zener-Stückelberg-Majorana Interferometry of a Single Hole Open
We perform Landau-Zener-Stückelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. Analogous to electron systems, at a magnetic field B=0…
Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic Factor Open
Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection co…