Anquan Jiang
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View article: Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase
Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase Open
View article: Processes Underlying the Year‐To‐Year Fluctuations of the Global Mean Surface Temperature
Processes Underlying the Year‐To‐Year Fluctuations of the Global Mean Surface Temperature Open
In addition to the global mean surface temperature (GMST), accurately predicting regional features associated with GMST changes is essential for effective climate policymaking at the regional level. This study investigates regional pattern…
View article: Cavity Effects and Prediction in the Vibration of Large-Section Rectangular Coal Roadways Induced by Deep-Hole Bench Blasting in Open-Pit Mines
Cavity Effects and Prediction in the Vibration of Large-Section Rectangular Coal Roadways Induced by Deep-Hole Bench Blasting in Open-Pit Mines Open
The dynamic response law of the vibration cavity effect in the adjacent large-section rectangular coal roadways induced by deep-hole bench blasting vibrations was deeply revealed, and the prediction accuracy of the PPV in the coal roadway …
View article: Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges
Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges Open
Hafnium (Hf) oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and a…
View article: Study on the Charge Structure Optimization for Coal–Rock Mixed Blasting and Separate Mining in Open-Pit Mine with High Benches
Study on the Charge Structure Optimization for Coal–Rock Mixed Blasting and Separate Mining in Open-Pit Mine with High Benches Open
This study systematically analyzes the influence of the charge length-to-diameter ratio and stemming length on the radius and volume of blasting craters in coal and rock blasting crater tests to effectively address the challenge of achievi…
View article: Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors
Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors Open
View article: Chiral materials in cancer therapy: Insight into metabolic, apoptotic, and immune pathways
Chiral materials in cancer therapy: Insight into metabolic, apoptotic, and immune pathways Open
Chirality, a fundamental property of biological systems, is intrinsic to numerous natural biosystems and plays a vital role in sustaining physiological processes. Leveraging their high specificity for biological targets, chiral nanomateria…
View article: Resolving Structural Origins for Superconductivity in Strain-Engineered La$_3$Ni$_2$O$_7$ Thin Films
Resolving Structural Origins for Superconductivity in Strain-Engineered La$_3$Ni$_2$O$_7$ Thin Films Open
The discovery of high-temperature superconductivity in bulk La$_3$Ni$_2$O$_7$ under high hydrostatic pressure and, more recently, biaxial compression in epitaxial thin films has ignited significant interest in understanding the interplay b…
View article: Experimental discrimination of domain switching behaviors within interfacial and bulk layers in the LiNbO3 domain-wall memory
Experimental discrimination of domain switching behaviors within interfacial and bulk layers in the LiNbO3 domain-wall memory Open
Multilevel resistance states with respect to the volume of the reversed domains in ferroelectric tunneling junctions and erasable conducting domain walls in an insulating ferroelectric matrix enable high-speed and energy-efficient ferroele…
View article: GigaHands: A Massive Annotated Dataset of Bimanual Hand Activities
GigaHands: A Massive Annotated Dataset of Bimanual Hand Activities Open
Understanding bimanual human hand activities is a critical problem in AI and robotics. We cannot build large models of bimanual activities because existing datasets lack the scale, coverage of diverse hand activities, and detailed annotati…
View article: A ferroelectric fin diode for robust non-volatile memory
A ferroelectric fin diode for robust non-volatile memory Open
View article: Roadmap for ferroelectric domain wall memory
Roadmap for ferroelectric domain wall memory Open
Commercial nonvolatile Ferroelectric Random Access Memory employs a destructive readout scheme based on charge sensing, which limits its cell scalability in sizes above 100 nm. Ferroelectric domain walls are two-dimensional topological int…
View article: Advanced Etching Techniques of LiNbO3 Nanodevices
Advanced Etching Techniques of LiNbO3 Nanodevices Open
Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and r…
View article: Ultrahigh dielectric permittivity and ferroelectric polarization in size-scaled Hf0.5Zr0.5O2 thin-film capacitors
Ultrahigh dielectric permittivity and ferroelectric polarization in size-scaled Hf0.5Zr0.5O2 thin-film capacitors Open
The ever-shrinking electrostatic capacitor with its high dielectric permittivity and ferroelectric polarization can store large quantities of electrical charge and energy for compact electronics and electrical power systems, leading to app…
View article: In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO<sub>3</sub> Interfaces
In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO<sub>3</sub> Interfaces Open
Direct data processing in nonvolatile memories can enable area‐ and energy‐efficient computation, unlike independent performance between separate processing and memory units; repetitive data transfer between these units represents a fundam…
View article: Nonvolatile ferroelectric field-effect transistors
Nonvolatile ferroelectric field-effect transistors Open
Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured dat…
View article: Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer
Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer Open
View article: Next-generation ferroelectric domain-wall memories: principle and architecture
Next-generation ferroelectric domain-wall memories: principle and architecture Open
The downscaling of commercial one-transistor–one capacitor ferroelectric memory cells is limited by the available signal window for the use of a charge integration readout technique. However, the erasable conducting charged walls that occu…
View article: Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO<sub>3</sub> Thin Films
Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO<sub>3</sub> Thin Films Open
Erasable electrical conductive domain walls in an insulating ferroelectric matrix provide novel functionalities for applications in logic and memory devices. The crux of such success requires sufficiently high wall currents to drive high‐s…
View article: The Influence of Conductive Nanodomain Walls on the Photovoltaic Effect of BiFeO3 Thin Films
The Influence of Conductive Nanodomain Walls on the Photovoltaic Effect of BiFeO3 Thin Films Open
Two Planar Pt electrodes with an inter-electrode distance of about 100 nm were fabricated at the surface of BiFeO3 thin films, which allow the manipulation of ferroelectric domain switching at nanoscale. This electrode configuration was pu…
View article: Conductivity of graphene affected by metal adatoms
Conductivity of graphene affected by metal adatoms Open
It has been a mystery how metal atoms adsorbed on perfect graphene impact the conductivity. We deposited Al, Cu, or Ag atoms onto graphene sheet on SiO2 substrate at room temperature or 573 K by pulsed laser ablation and measured the zero-…
View article: Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage
Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage Open
View article: Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors
Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors Open
View article: Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong
Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong Open
View article: Ultrasensitive and Broadband MoS<sub>2</sub> Photodetector Driven by Ferroelectrics
Ultrasensitive and Broadband MoS<sub>2</sub> Photodetector Driven by Ferroelectrics Open
A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones and 2570 A W(-1), respectively, at 635 nm with ZERO gate bias.…
View article: Antiferroelectric Thin Films: Giant Negative Electrocaloric Effect in Antiferroelectric La‐Doped Pb(ZrTi)O<sub>3</sub> Thin Films Near Room Temperature (Adv. Mater. 20/2015)
Antiferroelectric Thin Films: Giant Negative Electrocaloric Effect in Antiferroelectric La‐Doped Pb(ZrTi)O<sub>3</sub> Thin Films Near Room Temperature (Adv. Mater. 20/2015) Open
On page 3165, Y. Liu and co-workers demonstrate a giant negative electrocaloric effect (ECE) in antiferroelectric La-doped Pb(ZrTi)O3 thin films near room temperature. A possible mechanism of negative ECE in antiferroelectrics is proposed.…
View article: Ferroelectric polarization gating MoS2 photodetector
Ferroelectric polarization gating MoS2 photodetector Open
Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene fluoride-trif…