Ali Habiboglu
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Experimental demonstration of magnetic tunnel junction-based computational random-access memory Open
The conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence because much of the power and energy is consumed by constant data transfers between …
<i>L</i>10 FePd-based perpendicular magnetic tunnel junctions with 65% tunnel magnetoresistance and ultralow switching current density Open
L10 FePd is increasingly recognized as a potential candidate for magnetic tunnel junctions (MTJs), yet there remains room for enhancing device performance. In this work, we fabricated fully-integrated L10 FePd-based perpendicular MTJ devic…
The impact of boron doping in the tunneling magnetoresistance of Heusler alloy Co2FeAl Open
Heusler alloy-based magnetic tunnel junctions have the potential to provide high spin polarization, small damping, and fast switching. In this study, junctions with a ferromagnetic electrode of Co2FeAl were fabricated via room-temperature …
Experimental demonstration of magnetic tunnel junction-based computational random-access memory Open
Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between log…
Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl Open
Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/S…
Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions Open
The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect depends sensitively on the MgO adatom energy during the RF s…
Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers Open
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver uniq…
Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier Open
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-b…
Perpendicular magnetic tunnel junctions with multi-interface free layer Open
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy, and small cell size below 10 nm. Here, we study perpendicu…
View article: Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3 Open
High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization…
View article: Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3 Open
High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization…
Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions Open
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)O_{x} formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfa…