Andre Zeumault
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View article: Innovations in thin‐film electronics for the new generation of displays
Innovations in thin‐film electronics for the new generation of displays Open
Today's display industry faces transistor‐level challenges similar to those of complementary metal‐oxide semiconductor (CMOS) metal‐oxide semiconductor field‐effect transistors (MOSFETs) in the mid‐1990s. Learnings from MOSFETs inform the …
View article: 30.2: <i>Invited Paper:</i> Universal Description of FET Mobility of TFTs in Terms of Debye Length, Accumulation Layer Thickness and Film Thickness
30.2: <i>Invited Paper:</i> Universal Description of FET Mobility of TFTs in Terms of Debye Length, Accumulation Layer Thickness and Film Thickness Open
A material agnostic modeling framework is presented for predicting film thickness and Debye length scaling of electrical performance in TFTs. Material parameters for a‐IGZO are used to demonstrate the predictive capability of the model, wh…
View article: Memristor compact model with oxygen vacancy concentrations as state variables
Memristor compact model with oxygen vacancy concentrations as state variables Open
We present a unique compact model for oxide memristors based upon the concentration of oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen vacancy concentration is similar in effect to the reduction (expan…
View article: A Generalized Workflow for Creating Machine Learning-Powered Compact Models for Multi-State Devices
A Generalized Workflow for Creating Machine Learning-Powered Compact Models for Multi-State Devices Open
The predictive capability of existing physical descriptions of multi-state devices (e.g., oxide memristors, ferroelectrics, antiferroelectric, etc.) cannot be fully leveraged in circuit simulations due to practical limitations regarding th…
View article: TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems
TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems Open
In neuromorphic computing, memristors (or “memory resistors”) have been primarily studied as key elements in artificial synapse implementations, where the memristor provides a variable weight with intrinsic long-term memory capabilities, b…
View article: Correction to Probing the Kinetics of Crystallite Growth in Sol–Gel Derived Metal-Oxides Using Nanocalorimetry
Correction to Probing the Kinetics of Crystallite Growth in Sol–Gel Derived Metal-Oxides Using Nanocalorimetry Open
ADVERTISEMENT RETURN TO ISSUEPREVAdditions and Correc...Additions and CorrectionsNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to Probing the Kinetics of Crystallite Growth in Sol–Gel Derived Metal-Oxides Using NanocalorimetryA…
View article: Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics
Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics Open
Primarily used as transparent electrodes in solar-cells, more recently, physical vapor deposited(PVD) transparent conductive oxide (TCO) materials (e.g. ZnO, In2O3 and SnO2)also serve as the active layer in thin-film transistor (TFT) techn…