Andreas H. Hubmann
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View article: Unravelling the doping mechanism and origin of carrier limitation in Ti-doped In2O3 films
Unravelling the doping mechanism and origin of carrier limitation in Ti-doped In2O3 films Open
Ti-doped In2O3 thin films with varying Ti contents are prepared by partial reactive co-sputtering using ceramic In2O3 and metallic Ti targets and characterized by in situ x-ray photoelectron spectroscopy, electrical conductivity, and Hall-…
View article: Interface Behaviour and Work Function Modification of Self-Assembled Monolayers on Sn-Doped In2O3
Interface Behaviour and Work Function Modification of Self-Assembled Monolayers on Sn-Doped In2O3 Open
The modification of the work function of Sn-doped In2O3 (ITO) by vacuum adsorption of 4-(Dimethylamino)benzoic acid (4-DMABA) has been studied using in situ photoelectron spectroscopy. Adsorption of 4-DMABA is self-limited with an approxim…
View article: Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In<sub>2</sub>O<sub>3</sub> thin films (Phys. Status Solidi A 2∕2017)
Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In<sub>2</sub>O<sub>3</sub> thin films (Phys. Status Solidi A 2∕2017) Open
For the application as transparent conductive material, In2O3 is mostly doped with 10 wt. % SnO2. At such high dopant concentrations the Sn-donors, which are mobile at temperatures of 300°C or higher, can segregate to grain boundaries and …