Angelo Marshall
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View article: Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with <i>in vacuo</i> atomic layer deposition
Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with <i>in vacuo</i> atomic layer deposition Open
Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, a…
View article: Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al<sub>2</sub>O<sub>3</sub>/MgO memristors
Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al<sub>2</sub>O<sub>3</sub>/MgO memristors Open
Ultrathin (sub-2 nm) Al 2 O 3 /MgO memristors were recently developed using an in vacuo atomic layer deposition (ALD) process that minimizes unintended defects and prevents undesirable leakage current. These memristors provide a unique pla…
View article: Atomic-scale tuning of ultrathin memristors
Atomic-scale tuning of ultrathin memristors Open
Continuous device downsizing and circuit complexity have motivated atomic-scale tuning of memristors. Herein, we report atomically tunable Pd/M1/M2/Al ultrathin (<2.5 nm M1/M2 bilayer oxide thickness) memristors using in vacuo atomic layer…