Explanipedia

Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN Open

Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte , et al. · 2023

Utilisation de Nirmatrelvir/ritonavir chez des patients insuffisants rénaux chroniques sévères infectés par SARS-CoV-2 Open

Emmanuel Lafont, Damien Blez, Marc-Antoine Bildan, Hélène Péré, David Veyer , et al. · 2023

Lipémie rétinienne : manifestation rare d’une hypertriglycéridémie Open

I. Tordjmane, A. Michon, Christine Giraud, Jean‐Benoît Arlet, Christophe Orssaud · 2021

InGaN islands and thin films grown on epitaxial graphene Open

Colin Paillet, S. Vézian, Constantin Matei, A. Michon, B. Damilano , et al. · 2020

In this work, the growth of InGaN on epitaxial graphene by molecular beam epitaxy is studied. The nucleation of the alloy follows a three-dimensional (3D) growth mode in the observed temperature range of 515 °C-765 °C, leading to the forma…

Al5+αSi5+δN12, a new Nitride compound Open

Roy Dagher, L. Lymperakis, V. Delaye, Ludovic Largeau, A. Michon , et al. · 2019

Al$_{5+\alpha}$Si$_{5+\delta}$N$_{12}$, a new Nitride compound Open

Roy Dagher, L. Lymperakis, V. Delaye, Ludovic Largeau, A. Michon , et al. · 2019

We report on the synthesis of new nitride-based compound by using annealing\nof AlN heteroepitaxial layers under a Si-atmosphere at temperatures between\n1350$^\\circ$C and 1550$^\\circ$C. The structure and stoichiometry of this\ncompound …

Échographie ultraportable en médecine interne : retour d’expérience et point de vue Open

A. Michon, S. Jammal, A. Passeron, Guzmán Luna, C. Bomahou , et al. · 2018

Graphene integration with nitride semiconductors for high power and high frequency electronics Open

Filippo Giannazzo, G. Fisichella, Giuseppe Greco, Antonino La Magna, Fabrizio Roccaforte , et al. · 2016

Group III nitride semiconductors (III-N), including GaN, AlN, InN, and their alloys, are currently the materials of choice for many applications in optoelectronics (light-emitting diodes, laser diodes), and high-power and high-frequency tr…

Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions Open

D. Massarotti, B. Jouault, V. Rouco, S. Charpentier, Thilo Bauch , et al. · 2016

Superconducting hybrid junctions are revealing a variety of novel effects.\nSome of them are due to the special layout of these devices, which often use a\ncoplanar configuration with relatively large barrier channels and the\npossibility …

Convenient graphene-based quantum Hall resistance standards Open

J. Brun-Picard, Rebeca Ribeiro-Palau, F. Lafont, Dimitrios Kazazis, A. Michon , et al. · 2016

International audience

Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC Open

B. Jouault, S. Charpentier, D. Massarotti, A. Michon, Matthieu Paillet , et al. · 2016

Des ecchymoses diffuses Open

P. Lamhien, S. Mattioni, A. Michon, Olivier Steichen · 2016

Josephson coupling in junctions made of monolayer graphene on SiC Open

B. Jouault, S. Charpentier, D. Massarotti, A. Michon, Matthieu Paillet , et al. · 2016

Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has been measured in co-planar diffusive Al/monololayer graphene/A…

Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology Open

Rebeca Ribeiro-Palau, F. Lafont, J. Brun-Picard, Dimitrios Kazazis, A. Michon , et al. · 2015

The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide Open

F. Lafont, Rebeca Ribeiro-Palau, Dimitrios Kazazis, A. Michon, O. Couturaud , et al. · 2015

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