Antoine Pacco
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View article: Controlling Etch Anisotropy of Crystalline Germanium Nanostructures
Controlling Etch Anisotropy of Crystalline Germanium Nanostructures Open
Orientation‐dependent wet chemical etching of crystalline germanium (c‐Ge) is essential for the fabrication of next‐generation complementary metal oxide semiconductor (CMOS) devices. Here, using a combination of conventional and in situ li…
View article: Digital Etching of Molybdenum Interconnects Using Plasma Oxidation
Digital Etching of Molybdenum Interconnects Using Plasma Oxidation Open
Molybdenum (Mo) has a high potential of becoming the material of choice for sub‐10 nm scale metal structures in future integrated circuits (ICs). Manufacturing at this scale requires exceptional precision and consistency, so many metal pro…
View article: Solving the Annealing of Mo Interconnects for Next‐Gen Integrated Circuits
Solving the Annealing of Mo Interconnects for Next‐Gen Integrated Circuits Open
Recent surge in demand for computational power combined with strict constraints on energy consumption requires persistent increase in the density of transistors and memory cells in integrated circuits. Metal interconnects in their current …
View article: Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification
Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification Open
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric loss at different interfaces. α -tantalum is a superconductor that has proven effective in reducing dielectric loss and improv…
View article: Controlled Stepwise Wet Etching of Polycrystalline Mo Nanowires
Controlled Stepwise Wet Etching of Polycrystalline Mo Nanowires Open
With the persistent downscaling of integrated circuits, molybdenum (Mo) is currently considered a potential replacement for copper (Cu) as a material for metal interconnects. However, fabricating metal nanostructures with critical dimensio…
View article: Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers Open
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric l…
View article: Selective Wet Etching of Silicon Germanium in Composite Vertical Nanowires
Selective Wet Etching of Silicon Germanium in Composite Vertical Nanowires Open
Silicon germanium (SixGe1-x or SiGe) is an important semiconductor material for the fabrication of nanowire-based gate-all-around transistors in the next-generation logic and memory devices. During the fabrication process, SiGe can be used…
View article: Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants
Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants Open
Wet etching offers an advantage as a soft, damage-less method to remove sacrificial material with close to nanometer precision which has become critical for the fabrication of nanoscale structures. In order to develop such wet etching solu…
View article: Non-destructive characterization of extended crystalline defects in confined semiconductor device structures
Non-destructive characterization of extended crystalline defects in confined semiconductor device structures Open
Non-destructive and quantitative characterization of crystalline defects: understanding the formation and distribution of defects in nanoscale semiconductor device structures.