Anton Faustmann
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View article: Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates Open
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate stru…
View article: Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates Open
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate stru…
View article: Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices Open
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated…
View article: Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires
Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires Open
Nanowires (NWs) hold great potential in advanced thermoelectrics due to their reduced dimensions and low‐dimensional electronic character. However, unfavorable links between electrical and thermal conductivity in state‐of‐the‐art unpassiva…