Arie van Houselt
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View article: Realization of a one-dimensional topological insulator in ultrathin germanene nanoribbons
Realization of a one-dimensional topological insulator in ultrathin germanene nanoribbons Open
Realizing a one-dimensional (1D) topological insulator and identifying the lower-dimensional limit of two-dimensional (2D) behavior are crucial steps toward developing high-density quantum state networks, advancing topological quantum comp…
View article: Realization of a one-dimensional topological insulator in ultrathin germanene nanoribbons
Realization of a one-dimensional topological insulator in ultrathin germanene nanoribbons Open
Realizing a one-dimensional (1D) topological insulator and identifying the lower dimensional limit of two-dimensional (2D) behavior are crucial steps toward developing high-density quantum state networks, advancing topological quantum comp…
View article: Self-Assembled Decanethiolate Monolayers on Au(001): Expanding the Family of Known Phases
Self-Assembled Decanethiolate Monolayers on Au(001): Expanding the Family of Known Phases Open
We have studied decanethiolate self-assembled monolayers on the Au(001) surface. Planar and striped phases, as well as disordered regions, have formed after exposing the Au surface to a decanethiol solution. The planar phases that we obser…
View article: A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures
A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures Open
A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm …
View article: Wafer-scale fabrication and modification of silicon nano-pillar arrays for nanoelectronics, nanofluidics and beyond
Wafer-scale fabrication and modification of silicon nano-pillar arrays for nanoelectronics, nanofluidics and beyond Open
We report on the fabrication and modification of a top-down nanofabrication platform for enormous parallel silicon nanowire-based devices. We explain the nanowire formation in detail, using an additive hybrid lithography step, optimising a…
View article: Stoichiometric edges during the intrinsic growth of hexagonal boron nitride on Ir(111)
Stoichiometric edges during the intrinsic growth of hexagonal boron nitride on Ir(111) Open
The growth of hexagonal boron nitride, hBN, on Ir(111) at 1150–1200 K by thermal decomposition of borazine has been monitored in situ by means of low energy electron microscopy, LEEM. A major and unexpected hBN growth induced transformatio…
View article: Evaporation of Dilute Sodium Dodecyl Sulfate Droplets on a Hydrophobic Substrate
Evaporation of Dilute Sodium Dodecyl Sulfate Droplets on a Hydrophobic Substrate Open
Evaporation of surfactant-laden sessile droplets is omnipresent in nature and industrial applications such as inkjet printing. Soluble surfactants start to form micelles in an aqueous solution for surfactant concentrations exceeding the cr…
View article: Quantum size stabilization of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ge</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mi>Pt</mml:mi></mml:mrow></mml:math> nanofilms on Ge(001)
Quantum size stabilization of nanofilms on Ge(001) Open
The electronic and structural properties of a Ge-Pt alloy film on Ge(001) were studied with low-energy electron microscopy. Well above 1000 K, a bulklike eutectic film forms, followed by the emergence of an ordered Ge3Pt alloy upon solidif…
View article: Polar edges and their consequences for the structure and shape of hBN islands
Polar edges and their consequences for the structure and shape of hBN islands Open
The ionic component of the strong bond in hexagonal boron nitride (hBN) has been grossly disregarded in literature. Precisely this quantity is demonstrated to govern the shape of monolayer hBN islands grown at high temperatures. HBN zigzag…
View article: Critical vacancy density for melting in two-dimensions: the case of high density Bi on Cu(111)
Critical vacancy density for melting in two-dimensions: the case of high density Bi on Cu(111) Open
The two-dimensional melting/solidification transition of the high density [2012] phase of Bi on Cu(111) has been studied by means of low energy electron microscopy (LEEM). This well defined phase has an ideal concentration of one Bi atom p…
View article: Spatially resolved electronic structure of twisted graphene
Spatially resolved electronic structure of twisted graphene Open
We have used scanning tunneling microscopy and spectroscopy to resolve the spatial variation of the density of states of twisted graphene layers on top of a highly oriented pyrolytic graphite substrate. Owing to the twist a moire pattern d…
View article: Ordinary and supernumerary resonant scattering of low energy electrons from the BiCu<sub>2</sub>(111) surface alloy
Ordinary and supernumerary resonant scattering of low energy electrons from the BiCu<sub>2</sub>(111) surface alloy Open
Electron intensity versus energy curves from the ordered substitutional BiCu2(111)-surface alloy, obtained with low energy electron microscopy (LEEM), show distinct unexpected intensity dips under normal incidence conditions. The dips abov…
View article: Erratum: Structural and Electronic Properties of Germanene on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>[Phys. Rev. Lett.<b>116</b>, 256804 (2016)]
Erratum: Structural and Electronic Properties of Germanene on[Phys. Rev. Lett.<b>116</b>, 256804 (2016)] Open
This corrects the article DOI: 10.1103/PhysRevLett.116.256804.
View article: Structural and electronic properties of Pt induced nanowires on Ge(110)
Structural and electronic properties of Pt induced nanowires on Ge(110) Open
View article: Structural and Electronic Properties of Germanene on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
Structural and Electronic Properties of Germanene on Open
To date germanene has only been synthesized on metallic substrates. A metallic substrate is usually detrimental for the two-dimensional Dirac nature of germanene because the important electronic states near the Fermi level of germanene can…
View article: A new ATR-IR microreactor to study electric field-driven processes
A new ATR-IR microreactor to study electric field-driven processes Open