Silvia Armini
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View article: Wet‐Chemical Etching of Metals for Advanced Semiconductor Technology Nodes: Cu Recess Etching and Electrochemistry of Nanopatterned Metal Electrodes
Wet‐Chemical Etching of Metals for Advanced Semiconductor Technology Nodes: Cu Recess Etching and Electrochemistry of Nanopatterned Metal Electrodes Open
Nanopatterned electrodes (nominal trench width = 45 nm) have been generated to enable electrochemical measurements of metals in a damascene integration scheme. Fabrication is done at 300 mm wafer scale using standard semiconductor technolo…
View article: Oriented and Area-Selective Growth of Zeolitic Imidazolate Framework-8 Films by Molecular Layer Deposition
Oriented and Area-Selective Growth of Zeolitic Imidazolate Framework-8 Films by Molecular Layer Deposition Open
sponsorship: This project has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program (grant agreement n degrees 716472, acronym VAPORE), from the Research Foundatio…
View article: Correction: Colbeck Kirby et al. Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light. Nanomaterials 2024, 14, 982
Correction: Colbeck Kirby et al. Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light. Nanomaterials 2024, 14, 982 Open
In the original publication [...]
View article: Area-Selective Atomic Layer Deposition of Ru Using Carbonyl-Based Precursor and Oxygen Co-Reactant: Understanding Defect Formation Mechanisms
Area-Selective Atomic Layer Deposition of Ru Using Carbonyl-Based Precursor and Oxygen Co-Reactant: Understanding Defect Formation Mechanisms Open
Area selective deposition (ASD) is a promising IC fabrication technique to address misalignment issues arising in a top–down litho-etch patterning approach. ASD can enable resist tone inversion and bottom–up metallization, such as via pref…
View article: Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light
Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light Open
Perfluorododecyl iodide (I-PFC12) is of interest for area-selective deposition (ASD) applications as it exhibits intriguing properties such as ultralow surface energy, the ability to modify silicon’s band gap, low surface friction, and sui…
View article: A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO<sub>2</sub> Atomic Layer Deposition
A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO<sub>2</sub> Atomic Layer Deposition Open
status: Published
View article: Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging
Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging Open
HfO2 is investigated for its suitability to act as an oxygen and moisture barrier to prevent Cu oxidation in redistribution layers (RDLs) in 3D packaging technologies. HfO2 barriers of varying thicknesses were deposited via atomic layer de…
View article: Cyclic Plasma Halogenation of Amorphous Carbon for Defect-Free Area-Selective Atomic Layer Deposition of Titanium Oxide
Cyclic Plasma Halogenation of Amorphous Carbon for Defect-Free Area-Selective Atomic Layer Deposition of Titanium Oxide Open
As critical dimensions in integrated circuits continue to shrink, the lithography-based alignment of adjacent patterned layers becomes more challenging. Area-selective atomic layer deposition (ALD) allows circumventing the alignment issue …
View article: Structural Phases of Alkanethiolate Self-Assembled Monolayers (C<sub>1–12</sub>) on Cu[100] by Density Functional Theory
Structural Phases of Alkanethiolate Self-Assembled Monolayers (C<sub>1–12</sub>) on Cu[100] by Density Functional Theory Open
status: Published
View article: Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration
Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration Open
Selective ALD of Ru on Si-based materials with simultaneous ALD inhibition on the amorphous carbon surface enabled by remote H plasma.
View article: Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective
Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective Open
In this review, we discuss the progress of emerging dry processes with atomic precision. Researchers in the field of plasma processing and surface science have addressed the increasingly challenging demands of material selectivity by utili…
View article: Vapor-deposited octadecanethiol masking layer on copper to enable area selective Hf3N4 atomic layer deposition on dielectrics studied by <i>in situ</i> spectroscopic ellipsometry
Vapor-deposited octadecanethiol masking layer on copper to enable area selective Hf3N4 atomic layer deposition on dielectrics studied by <i>in situ</i> spectroscopic ellipsometry Open
Area-selective atomic layer deposition (AS-ALD) has attracted a great deal of attention in recent years for self-aligned accurate pattern placement with subnanometer thickness control. The authors demonstrate a methodology to achieve AS-AL…
View article: SAMs (self-assembled monolayers) passivation of cobalt microbumps for 3D stacking of Si chips
SAMs (self-assembled monolayers) passivation of cobalt microbumps for 3D stacking of Si chips Open
In this paper SAM (self-assembled monolayers) is used to passivate cobalt microbumps for 3D-stacking of Si chips. The SAM deposition process is optimized, using input from characterization techniques such as water contact angle measurement…
View article: Laser anneal of oxycarbosilane low-k film
Laser anneal of oxycarbosilane low-k film Open
Submilisecond laser anneal has been experimentally investigated for porogen removal and its ability to improve the mechanical strength in oxycarbosilane ultra low-k films compromised due to the introduction of porosity. We report the occur…
View article: UV cure of oxycarbosilane low-k films
UV cure of oxycarbosilane low-k films Open
Plasma damage
View article: Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films
Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films Open
The ultra-violet (UV) and vacuum ultra-violet (VUV) resistance of bridging alkylene groups in organosilica films has been investigated. Similar to the Si-CH3 (methyl) bonds, the Si-CH2-Si (methylene) bonds are not affected by 5.6 eV irradi…