Athanasios Gkotinakos
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View article: At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures
At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures Open
As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of…
Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content Open
InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride s…