Athira Sunil
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View article: Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric Hf <sub> <i>x</i> </sub> Zr <sub> 1 – <i>x</i> </sub> O <sub>2</sub> through Hf Content Modulation
Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric Hf <sub> <i>x</i> </sub> Zr <sub> 1 – <i>x</i> </sub> O <sub>2</sub> through Hf Content Modulation Open
The excellent scalability and compatibility to current CMOS manufacturing processes make ferroelectric HfxZr1 - xO2 thin films a promising candidate for embedded nonvolatile memories, as well as for synaptic devices in neuro-inspired compu…
View article: 10‐4: <i>Late‐News Paper:</i> Precise Compensation of Device Variability in IGZO‐based Ferroelectric Thin‐Film Transistors for Enhanced Transparent Display Performance
10‐4: <i>Late‐News Paper:</i> Precise Compensation of Device Variability in IGZO‐based Ferroelectric Thin‐Film Transistors for Enhanced Transparent Display Performance Open
We demonstrate the compensation of device‐to‐device variation in threshold voltage using programmable ferroelectric indium‐gallium‐zinc‐oxide thin‐film transistors. Furthermore, degradationinduced threshold voltage shift can be mitigated b…
View article: Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility
Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility Open
Hafnium oxide (HfO 2 )‐based ferroelectric field effect transistors (FeFETs) revolutionize the emerging nonvolatile memory area, especially with the potential to replace flash memories for several applications. In this article, the suitabi…
View article: FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility
FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility Open
Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications. In this article, we inv…
View article: FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility
FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility Open
Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications. In this article, we inv…
View article: Impact of Fringing Field on the Memory Window of FeFET
Impact of Fringing Field on the Memory Window of FeFET Open
In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and en…
View article: Impact of Fringing Field on the Memory Window of FeFET
Impact of Fringing Field on the Memory Window of FeFET Open
In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and en…