Avirup Dasgupta
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View article: Artificial Synapse based on ULTRARAM Memory Device for Neuromorphic Applications
Artificial Synapse based on ULTRARAM Memory Device for Neuromorphic Applications Open
The memory demands of large-scale deep neural networks (DNNs) require synaptic weight values to be stored and updated in off-chip memory like dynamic random-access memory, which reduces energy efficiency and increases training time. Monoli…
View article: Physics, modeling, and benchmarking of ULTRARAM: A compound semiconductor-based memory device
Physics, modeling, and benchmarking of ULTRARAM: A compound semiconductor-based memory device Open
ULTRARAM is a promising emerging memory exhibiting high endurance, long retention, and ultra-low switching energy per unit area. This compound semiconductor-based non-volatile memory utilizes triple barrier resonant tunneling (TBRT) throug…
View article: A method to generate additional volatile states using single-domain ferroelectric field-effect transistor
A method to generate additional volatile states using single-domain ferroelectric field-effect transistor Open
In this paper, we have proposed a novel technique to generate the additional volatile states using an ultra-scaled 12 nm technology node fully depleted silicon on insulator Ferroelectric field-effect transistor (FeFET). The proposed method…
View article: Physics-Based Compact Model of Subband Energy for Gaafets Including Corner Rounding and Geometric Variability Analysis Utilizing Monte Carlo Simulation
Physics-Based Compact Model of Subband Energy for Gaafets Including Corner Rounding and Geometric Variability Analysis Utilizing Monte Carlo Simulation Open
View article: Performance Projection of Gate-All-Around (GAA)-Based Negative Capacitance Complementary FET (NC-CFET) Relative to Standard CFET
Performance Projection of Gate-All-Around (GAA)-Based Negative Capacitance Complementary FET (NC-CFET) Relative to Standard CFET Open
In this article, we have compared the negative capacitance complementary FET (NC-CFET) from a device-circuit perspective with the experimentally demonstrated CFET. NC-CFET could potentially offer additional advantages over conventional CFE…
View article: Study of Enhanced Ferromagnetic Behavior of Mn-Doped 2D Janus Cr₂S₂I₂ Monolayer
Study of Enhanced Ferromagnetic Behavior of Mn-Doped 2D Janus Cr₂S₂I₂ Monolayer Open
View article: A Compact Model of Perpendicular Spin-Transfer-Torque Magnetic Tunnel Junction
A Compact Model of Perpendicular Spin-Transfer-Torque Magnetic Tunnel Junction Open
We present a new compact model of a perpendicular spin-transfer-torque (STT) magnetic tunnel junction (MTJ). Previous studies on STT-MTJs have either focused on solving the Landau-Lifshitz-Gilbert (LLG) equation or utilizing critical curre…
View article: Fast Multi-ANN Composite Models for Repeater Optimization in Presence of Parametric Uncertainty for on-Chip Hybrid Copper-Graphene Interconnects
Fast Multi-ANN Composite Models for Repeater Optimization in Presence of Parametric Uncertainty for on-Chip Hybrid Copper-Graphene Interconnects Open
In this paper, composite models are developed to predict the statistics of the optimal number and size of repeaters required to minimize the power delay product (PDP) of on-chip hybrid copper-graphene interconnects when subject to parametr…
View article: Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes
Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes Open
In this work, a compact model for parasitic capacitances is proposed for Gate-All-Around silicon nanosheet FET (GAAFET). For 3 stack GAAFET, all possible parasitic capacitance components are included according to the electric field lines a…
View article: Compact Modeling of Surface Potential, Drain Current and Terminal Charges in Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport
Compact Modeling of Surface Potential, Drain Current and Terminal Charges in Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport Open
In this article, we propose a compact model for Negative Capacitance Nanosheet Field Effect Transistor (NC-NSFET) including quasi-ballistic transport for sub-7nm technology node. The model captures the electrical characteristics of NC-NSFE…
View article: BSIM-CMG Compact Model for IC CAD: from FinFET to Gate-All-Around FET Technology
BSIM-CMG Compact Model for IC CAD: from FinFET to Gate-All-Around FET Technology Open
We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate (CMG) device. This is an industry standard model which has been used extensively for FinFETs IC design and simulation, and has now been extended to accura…
View article: Characterization of RF Noise in UTBB FD-SOI MOSFET
Characterization of RF Noise in UTBB FD-SOI MOSFET Open
In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various…