Bernard Gil
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View article: Nanoscale Band Gap Modulation and Dual Moiré Superlattices of Hexagonal Boron Nitride Weakly Coupled to Graphite
Nanoscale Band Gap Modulation and Dual Moiré Superlattices of Hexagonal Boron Nitride Weakly Coupled to Graphite Open
Van der Waals (vdW) materials, such as hexagonal boron nitride (h-BN), are highly promising for applications in optoelectronics and quantum technologies. When assembled into heterostructures, h-BN can form moiré superlattices, enabling the…
View article: Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure
Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure Open
Pressure is a powerful tool for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of e…
View article: Growth of rhombohedral boron nitride crystals using an iron flux
Growth of rhombohedral boron nitride crystals using an iron flux Open
We report the growth of high quality rhombohedral boron nitride (rBN) crystals by the iron flux method at atmospheric pressure. In contrast to the lamellar structure of standard hexagonal boron nitride (hBN) covering the metal ingot, the c…
View article: Extreme Longitudinal Thermal Conductivity and Non-Diffusive Heat Transport in Isotopic hBN
Extreme Longitudinal Thermal Conductivity and Non-Diffusive Heat Transport in Isotopic hBN Open
We measure the temperature profile and investigate the thermal conductivity of suspended monoisotopic hexagonal boron nitride (h10BN) heterostructures by combining suspended microbridge technique and Raman spectroscopy. The thermal conduct…
View article: Modeling the Optical Efficiency of AlGaN/GaN Light Emission Diodes with 2D Carrier Localization
Modeling the Optical Efficiency of AlGaN/GaN Light Emission Diodes with 2D Carrier Localization Open
The efficiency of nitride‐based optical devices, with particular focus on Al x Ga 1‐ x N/AlN quantum wells used for deep ultraviolet light emission is investigated. The study addresses the wavelength dependence of the photoluminescence and…
View article: Isotope Substitution and Polytype Control for Point Defects Identification: The Case of the Ultraviolet Color Center in Hexagonal Boron Nitride
Isotope Substitution and Polytype Control for Point Defects Identification: The Case of the Ultraviolet Color Center in Hexagonal Boron Nitride Open
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers …
View article: Growth of hexagonal BN crystals by traveling-solvent floating zone
Growth of hexagonal BN crystals by traveling-solvent floating zone Open
Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN c…
View article: Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride Open
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View article: Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes
Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes Open
Although large efforts have been made to improve the growth of hexagonal boron nitride (hBN) by heteroepitaxy, the non-native substrates remain a fundamental factor that limits the quality. This problem can be solved by homoepitaxy, which …
View article: The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers
The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers Open
The polarized photoluminescence emitted on the edge of a series of aluminum‐rich (Al,Ga)N‐AlN quantum wells (QWs) grown by molecular beam epitaxy on AlN templates deposited by metal organic chemical vapor deposition on c‐plane sapphire is …
View article: Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride Open
The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise u…
View article: Layer-by-layer connection for large area single crystal boron nitride multilayer films
Layer-by-layer connection for large area single crystal boron nitride multilayer films Open
Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two…
View article: Spatially-resolved UV-C emission in epitaxial monolayer boron nitride
Spatially-resolved UV-C emission in epitaxial monolayer boron nitride Open
We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photo…
View article: Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings
Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings Open
The luminescence efficiency of AlxGa1−xN quantum dots (QDs) and quantum wells (QWs), buried in AlN cladding layers and emitting in the ultraviolet range between 234 and 310 nm, has been investigated. The growth and optical properties have …
View article: Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride
Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride Open
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View article: Boron and Nitrogen Isotope Effects on Hexagonal Boron Nitride Properties
Boron and Nitrogen Isotope Effects on Hexagonal Boron Nitride Properties Open
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising 2D material for electronic, optoelectronic, nanophotonic, and quantum devices. Here, the changes in hBN's pr…
View article: Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride
Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride Open
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View article: Optically-active spin defects in few-layer thick hexagonal boron nitride
Optically-active spin defects in few-layer thick hexagonal boron nitride Open
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate …
View article: Polytypes of boron nitride – developing deep UV emitters
Polytypes of boron nitride – developing deep UV emitters Open
Boron nitride (BN) was first synthesised in 1842 as a powdery solid and is characterised by a layered honeycomb structure resembling graphite, micas, and other semiconductor materials.In its most common form, BN consists of layers of hexag…
View article: Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si<i> <sub>x</sub> </i>N<i> <sub>y</sub> </i>
Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si<i> <sub>x</sub> </i>N<i> <sub>y</sub> </i> Open
Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-sectio…
View article: High p doped and robust band structure in Mg-doped hexagonal boron nitride
High p doped and robust band structure in Mg-doped hexagonal boron nitride Open
In two dimensional materials, substitutional doping during growth can be used to alter the electronic properties.
View article: Stacking-dependent deep level emission in boron nitride
Stacking-dependent deep level emission in boron nitride Open
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View article: Superradiance of optical phonons in two-dimensional materials
Superradiance of optical phonons in two-dimensional materials Open
We study the superradiance of optical phonons during the two- to three-dimensional (2D-3D) crossover of the light-matter interaction in multilayers of atomic crystals. We show the emergence of a superradiant regime with a mode having a lin…
View article: Determination of the direct bandgap value in In<sub>4</sub>Se<sub>3</sub> thin films
Determination of the direct bandgap value in In<sub>4</sub>Se<sub>3</sub> thin films Open
The value and the nature of the bandgap of In 4 Se 3 are still not well defined, with a large spread of the experimental data between 0.42 and 1.68 eV and an uncertain nature, predicted to be indirect by ab initio band structure calculatio…
View article: Magnetic imaging with spin defects in hexagonal boron nitride
Magnetic imaging with spin defects in hexagonal boron nitride Open
Data relative to the publication arXiv:2207.10477
View article: Magnetic imaging with spin defects in hexagonal boron nitride
Magnetic imaging with spin defects in hexagonal boron nitride Open
Data relative to the publication arXiv:2207.10477