Baile Chen
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View article: High-accuracy eigenmode computation in slab waveguides with arbitrary material profiles: a transfer matrix approach
High-accuracy eigenmode computation in slab waveguides with arbitrary material profiles: a transfer matrix approach Open
Accurately solving both guided and unguided complex modes for waveguides with arbitrary material profiles remains a significant challenge in computational photonics. Traditional analytical approaches to solving Maxwell’s equations in optic…
View article: Noise fluctuations in composition-graded mid-wavelength infrared photodiode from temperature and illumination
Noise fluctuations in composition-graded mid-wavelength infrared photodiode from temperature and illumination Open
This paper is mainly centered on the nature of low frequency noise fluctuations in composition-graded HgCdTe mid-wavelength infrared (MWIR) photodiode with temperature across 80 K-300 K under dark and blackbody illumination. The results de…
View article: Integrated thin film lithium niobate mid-infrared modulator
Integrated thin film lithium niobate mid-infrared modulator Open
The mid-infrared spectral range holds great promise for applications such as molecular spectroscopy and telecommunications. Many key molecules exhibit strong absorption features in this range, and free-space optical communication benefits …
View article: High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers
High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers Open
This study presents the development of a high-speed, broadband InGaAs/InP photodiode suitable for advanced sensing and optical detection applications across the critical wavelength range of 850–1550 nm. By employing an InAlAs window layer …
View article: A chip-integrated comb-based microwave oscillator
A chip-integrated comb-based microwave oscillator Open
Low-noise microwave oscillators are cornerstones for wireless communication, radar and clocks. The employment and optimization of optical frequency combs have enabled photonic microwave synthesizers with unrivalled noise performance and ba…
View article: On‐Chip Brillouin Amplifier in Suspended Lithium Niobate Nanowaveguides
On‐Chip Brillouin Amplifier in Suspended Lithium Niobate Nanowaveguides Open
Thin film lithium niobate (TFLN) has emerged as a leading material platform for integrated nonlinear photonics, enabling transformative applications such as broadband Kerr soliton microcomb and high‐speed electro‐optic modulation. While st…
View article: High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region
High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region Open
Mid-wavelength infrared (MWIR) avalanche photodiodes (APD) are extensively employed in high-precision detection and thermal imaging in complex context. However, conventional MWIR APD’s detection typically requires low-temperature operation…
View article: Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode
Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode Open
This study introduces a digital alloy AlAsSb/GaAsSb avalanche photodiode (APD) on InP, demonstrating low dark current and low noise performance. The lattice-matched AlAsSb/GaAsSb APD structure exhibits a dark current density of 16 μ A/cm 2…
View article: Multi-stage infrared detectors
Multi-stage infrared detectors Open
This paper provides a comprehensive review of multi-stage infrared detectors, including interband cascade infrared photodetectors (ICIPs) and quantum cascade detectors (QCDs). These detectors exhibit low dark current, high detectivity, and…
View article: High Temperature Tolerant Mid-Wavelength Infrared Avalanche Photodiodes with Separated Fully-depleted Absorption, Multiplication Region
High Temperature Tolerant Mid-Wavelength Infrared Avalanche Photodiodes with Separated Fully-depleted Absorption, Multiplication Region Open
Mid-wavelength infrared (MWIR) avalanche photodiodes (APD) are extensively employed in rapid, high-precision detection as well as thermal imaging in complex context due to their superior sensitivity, fast response, and high gain. However, …
View article: Ultra-fast, high-power MUTC Photodiodes with bandwidth-efficiency product over 130 GHz * 100%
Ultra-fast, high-power MUTC Photodiodes with bandwidth-efficiency product over 130 GHz * 100% Open
The accelerating demand for wireless communication necessitates wideband, energy-efficient photonic sub-terahertz (sub-THz) sources to enable ultra-fast data transfer. However, as critical components for THz photonic mixing, photodiodes (P…
View article: On-chip Brillouin Amplifier in Suspended Lithium Niobate Nanowaveguides
On-chip Brillouin Amplifier in Suspended Lithium Niobate Nanowaveguides Open
Thin film lithium niobate (TFLN) has emerged as a leading material platform for integrated nonlinear photonics, enabling transformative applications such as broadband Kerr soliton microcomb and high-speed electro-optic modulation. While st…
View article: A chip-integrated comb-based microwave oscillator
A chip-integrated comb-based microwave oscillator Open
Low-noise microwave oscillators are cornerstones for wireless communication, radar and clocks. Optical frequency combs have enabled photonic microwaves with unrivalled noise performance and bandwidth. Emerging interest is to generate micro…
View article: Ultra-fast Waveguide MUTC Photodiodes over 220 GHz
Ultra-fast Waveguide MUTC Photodiodes over 220 GHz Open
We present InP-based evanescently-coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) exhibiting a breakthrough in bandwidth. The optimization of carrier transport and optical coupling is achieved through a detailed dis…
View article: Design and Fabrication of High Performance InGaAs near Infrared Photodetector
Design and Fabrication of High Performance InGaAs near Infrared Photodetector Open
InGaAs photodiodes have a wide range of important applications; for example, NIR imaging, fiber optical communication, and spectroscopy. In this paper, we studied InGaAs photodiodes with different doping concentration absorber layers. The …
View article: Single-pixel p-graded-n junction spectrometers
Single-pixel p-graded-n junction spectrometers Open
Ultra-compact spectrometers are becoming increasingly popular for their promising applications in biomedical analysis, environmental monitoring, and food safety. In this work, we report a novel single-pixel-photodetector spectrometer with …
View article: Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection
Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection Open
This paper reports a high-performance microwave receiver protector (RP) based on a single gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of 30 to 3000 MHz. The HEMT-based RP exhibits multi features…
View article: High-speed Ge-on-GaAs photodetector
High-speed Ge-on-GaAs photodetector Open
In this work, a germanium (Ge) on gallium arsenide (GaAs) photodetector is demonstrated with the optical response from 850 nm to 1600 nm, which has potential for monolithic integration with VCSELs on GaAs platform as transceiver working be…
View article: Analysis of AM-to-PM conversion in MUTC photodiodes based on an equivalent circuit model
Analysis of AM-to-PM conversion in MUTC photodiodes based on an equivalent circuit model Open
High-speed, high power-handling photodiodes with sufficiently low amplitude-to-phase (AM-to-PM) conversion coefficients are critical components in the systems that generate ultra-stable microwave signals. This paper reports the AM-to-PM co…
View article: Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector
Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector Open
In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current d…
View article: Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications
Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications Open
High speed photodetectors operating at a telecommunication band (from 1260 to 1625 nm) have been well studied with the development of an optical fiber communication system. Recent innovations of photonic systems have raised new requirement…
View article: Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array Open
High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE). In this work, we demonstrate the first long-wavelength infrared InAs/GaSb superlattice FPA…
View article: High-speed mid-wave infrared interband cascade photodetector at room temperature
High-speed mid-wave infrared interband cascade photodetector at room temperature Open
High-speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed room-tempera…
View article: Low frequency noise-dark current correlations in HgCdTe infrared photodetectors
Low frequency noise-dark current correlations in HgCdTe infrared photodetectors Open
In this paper, low frequency noise and dark current correlation is investigated as a function of reverse bias and temperature for short-wave infrared (SWIR), mid-wave infrared (MWIR), and long-wave infrared (LWIR) HgCdTe homo-junction phot…
View article: InvertedSi:PbS Colloidal Quantum Dot Heterojunction-BasedInfrared Photodetector
InvertedSi:PbS Colloidal Quantum Dot Heterojunction-BasedInfrared Photodetector Open
Silicon\nand PbS colloidal quantum dot heterojunction photodetectors\ncombine the advantages of the Si device and PbS CQDs, presenting a\npromising strategy for infrared light detecting. However, the construction\nof a high-quality CQDs:Si…
View article: Defect characterization of AlInAsSb digital alloy avalanche photodetectors with low frequency noise spectroscopy
Defect characterization of AlInAsSb digital alloy avalanche photodetectors with low frequency noise spectroscopy Open
An avalanche photodetector (APD) based on the Al x In 1-x As y Sb 1-y digital alloy materials system has recently attracted extensive attention due to its extremely low excess noise. Device defects are a critical factor limiting the perfor…
View article: High Speed Mid-Wave Infrared Uni-traveling Carrier Photodetector
High Speed Mid-Wave Infrared Uni-traveling Carrier Photodetector Open
Mid-wave infrared (MWIR) frequency comb is expected to dramatically improve the precision and sensitivity of molecular spectroscopy. For high resolution application, high speed MWIR photodetector is one of the key components, however, the …