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View article: Charge accumulation by Direct Magnetoelectric Effect in ScAlN/Ni Nanoscale Devices
Charge accumulation by Direct Magnetoelectric Effect in ScAlN/Ni Nanoscale Devices Open
This work investigates the direct magnetoelectric effect in thin-film lab scale composite heterostructures comprising a 100 nm thick piezoelectric Sc0.4Al0.6N (ScAlN) and a magnetostrictive Ni with 100-200 nm thickness, fabricated on Si/Si…
View article: Optimization of Floquet fluxonium qubits with commensurable two-tone drives
Optimization of Floquet fluxonium qubits with commensurable two-tone drives Open
Protecting superconducting qubits from low-frequency noise by operating them on dynamical sweet-spot manifolds has proven to be a promising setup, theoretically as well as experimentally . These dynamical sweet spots are induced by an exte…
View article: Power Transfer in Magnetoelectric Resonators: a Combined Analytical and Finite Element Study
Power Transfer in Magnetoelectric Resonators: a Combined Analytical and Finite Element Study Open
We present an analytical model for power transfer in a magnetoelectric film bulk acoustic resonator (FBAR) comprising a piezoelectric-magnetostrictive bilayer. The model describes the power flow between the elastic and magnetic systems, qu…
View article: Qudit vs. Qubit: Simulated performance of error correction codes in higher dimensions
Qudit vs. Qubit: Simulated performance of error correction codes in higher dimensions Open
Qudits can be described by a state vector in a $q$-dimensional Hilbert space, enabling a more extensive encoding and manipulation of information compared to qubits. This implies that conducting fault-tolerant quantum computations using qud…
View article: Magnetic‐Field Induced Charge Accumulation in Scalable Magnetoelectric PVDF‐TrFE/Ni Composite Devices
Magnetic‐Field Induced Charge Accumulation in Scalable Magnetoelectric PVDF‐TrFE/Ni Composite Devices Open
This study investigates the direct magnetoelectric effect in thin film composites comprising a 550 nm thick poly(vinylidene fluoride‐trifluoroethylene) (PVDF‐TrFE) layer spin‐coated onto a 500 µm thick Ni foil substrate. Direct measurement…
View article: Progress in Spin Logic Devices Based on Domain-Wall Motion
Progress in Spin Logic Devices Based on Domain-Wall Motion Open
Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memorie…
View article: Spin–Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions
Spin–Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions Open
Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping …
View article: Magnetization-switching dynamics driven by chiral coupling
Magnetization-switching dynamics driven by chiral coupling Open
The Dzyaloshinskii-Moriya interaction (DMI) is known to play a central role in stabilizing chiral spin textures such as skyrmions and domain walls (DWs). Electrical manipulation of DW and skyrmion motion offers possibilities for next gener…
View article: Towards fully electrically controlled domain-wall logic
Towards fully electrically controlled domain-wall logic Open
Utilizing magnetic tunnel junctions (MTJs) for write/read and fast spin-orbit-torque (SOT)-driven domain-wall (DW) motion for propagation, enables non-volatile logic and majority operations, representing a breakthrough in the implementatio…
View article: Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn, V, Fe-Doped $\rm WSe_2$
Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn, V, Fe-Doped $\rm WSe_2$ Open
Using Hubbard U corrected density functional theory calculations, lattice Monte-Carlo, and spin-Monte-Carlo simulations, we investigate the impact of dopant clustering on the magnetic properties of WSe2~doped with period four transition me…
View article: Superconductor-semiconductor hybrid capacitance with a nonlinear charge–voltage profile
Superconductor-semiconductor hybrid capacitance with a nonlinear charge–voltage profile Open
Electronic devices that work in the quantum regime often employ hybrid nanostructures to bring about a nonlinear behaviour. The nonlinearity that these can provide has proven to be useful, in particular, for applications in quantum computa…
View article: Review of Orbital Magnetism in Graphene-Based Moiré Materials
Review of Orbital Magnetism in Graphene-Based Moiré Materials Open
Recent years have seen the emergence of moiré materials as an attractive platform for observing a host of novel correlated and topological phenomena. Moiré heterostructures are generated when layers of van der Waals materials are stacked s…
View article: A superconducting quantum information processor with high qubit connectivity
A superconducting quantum information processor with high qubit connectivity Open
Coupling of transmon qubits to resonators that serve as storage for information provides alternative routes for quantum computing. Such a scheme paves the way for achieving high qubit connectivity, which is a great challenge in cQED system…
View article: Superconductor-semiconductor hybrid capacitance with a nonlinear charge-voltage profile
Superconductor-semiconductor hybrid capacitance with a nonlinear charge-voltage profile Open
Electronic devices that work in the quantum regime often employ hybrid nanostructures to bring about a nonlinear behaviour. The nonlinearity that these can provide has proven to be useful, in particular, for applications in quantum computa…
View article: Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current Open
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the requir…
View article: Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current Open
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirem…
View article: Atomistic Modeling of Spin and Electron Dynamics in Two-Dimensional Magnets Switched by Two-Dimensional Topological Insulators
Atomistic Modeling of Spin and Electron Dynamics in Two-Dimensional Magnets Switched by Two-Dimensional Topological Insulators Open
sponsorship: The project and work presented here were sponsored by the Department of Defense, Defense Threat Reduction Agency. The content of the information does not necessarily reflect the position or the policy of the U.S. Federal Gover…
View article: Impact of passivation on the Dirac cones of 2D topological insulators
Impact of passivation on the Dirac cones of 2D topological insulators Open
Topological insulators have unique properties that make them promising materials for future implementation in next-generation electronic devices. However, topological insulators like stanene nanoribbons need to be passivated before they ca…
View article: Power transfer in magnetoelectric resonators
Power transfer in magnetoelectric resonators Open
We derive an analytical model for the power transfer in a magnetoelectric film bulk acoustic resonator consisting of a piezoelectric--magnetostrictive bilayer. The model describes the dynamic magnetostrictive influence on the elastodynamic…
View article: Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators
Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators Open
To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option f…
View article: Optimization of Tungsten <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>β</mml:mi></mml:math>-Phase Window for Spin-Orbit-Torque Magnetic Random-Access Memory
Optimization of Tungsten -Phase Window for Spin-Orbit-Torque Magnetic Random-Access Memory Open
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View article: Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy
Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy Open
We compare three first-principles methods of calculating the Curie temperature in two-dimensional (2D) ferromagnetic materials (FM), modeled using the Heisenberg model, and propose a simple formula for estimating the Curie temperature with…
View article: Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin–orbit interaction
Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin–orbit interaction Open
We investigate the torque field and skyrmion motion at an interface between a ferromagnet hosting a skyrmion and a material with a strong spin–orbit interaction. We analyze both semiconductor materials and topological insulators using a Ha…
View article: Lumped circuit model for inductive antenna spin-wave transducers
Lumped circuit model for inductive antenna spin-wave transducers Open
We derive a lumped circuit model for inductive antenna spin-wave transducers in the vicinity of a ferromagnetic medium. The model considers the antenna's Ohmic resistance, its inductance, as well as the additional inductance due to the exc…
View article: Skyrmion elongation, duplication, and rotation by spin-transfer torque under spatially varying spin current
Skyrmion elongation, duplication, and rotation by spin-transfer torque under spatially varying spin current Open
The effect of the spatially varying spin current on a skyrmion is numerically\ninvestigated. It is shown that an inhomogeneous current density induces an\nelongation of the skyrmion. This elongation can be controlled using current\npulses …
View article: Ab-Initio Study of Magnetically Intercalated Platinum Diselenide: The Impact of Platinum Vacancies
Ab-Initio Study of Magnetically Intercalated Platinum Diselenide: The Impact of Platinum Vacancies Open
We study the magnetic properties of platinum diselenide (PtSe2) intercalated with Ti, V, Cr, and Mn, using first-principle density functional theory (DFT) calculations and Monte Carlo (MC) simulations. First, we present the equilibrium pos…
View article: Fabry–Pérot interferometry with gate-tunable 3D topological insulator nanowires
Fabry–Pérot interferometry with gate-tunable 3D topological insulator nanowires Open
Three-dimensional topological insulator (3D TI) nanowires display remarkable magnetotransport properties that can be attributed to their spin-momentum-locked surface states such as quasiballistic transport and Aharonov–Bohm oscillations. H…
View article: Torque field and skyrmion movement by spin transfer torque in a quasi-2d interface in presence of strong spin-orbit interaction
Torque field and skyrmion movement by spin transfer torque in a quasi-2d interface in presence of strong spin-orbit interaction Open
We investigate the torque field and skyrmion movement at an interface between a ferromagnet hosting a skyrmion and a material with strong spin-orbit interaction. We analyze both semiconductor materials and topological insulators using a Ha…