Bastien Beltrando
YOU?
Author Swipe
View article: Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development
Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development Open
In this paper we present a bottom-up device development methodology leveraging multiscale material-device modeling for the development of novel analog electronic synapses. We used multiscale materials-device physics simulations to screen m…
View article: Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND Open
Continuation of the scaling and increase of the storage density of the 3D NAND requires minimization and control of variability sources. Among the various reliability challenges, cross-temperature phenomena are considered as one of the rel…
View article: Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents Open
We investigate physical mechanisms driving the retention and disturb of charge-trap (CT) based and ferroelectric-(FE) based 3D NAND string. Combining a calibrated CT 3D NAND model and calibrated material properties of the FE material (extr…
View article: Electron-assisted switching in FeFETs: Memory window dynamics – retention – trapping mechanisms and correlation
Electron-assisted switching in FeFETs: Memory window dynamics – retention – trapping mechanisms and correlation Open
We investigate the impact of charge-trapping on ferroelectric (FE) switching and its influence on memory window (MW) and retention of FeFET. Fabricated FinFETs with ferroelectric gate stack were used to study defects properties (within HZO…
View article: Variability sources and reliability of 3D — FeFETs
Variability sources and reliability of 3D — FeFETs Open
Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the logic domain to high-density storage and neuromorphic computing. In this paper …
View article: Investigation of $I-V$ Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications
Investigation of $I-V$ Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications Open
We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity of TaOX-based resistive switching memory (RRAM) devices for their possible application as electronic synapses. By using e…