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View article: Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon
Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon Open
This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable …
View article: Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon
Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon Open
We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithi…
View article: High conductivity n-Al<sub>0.6</sub>Ga<sub>0.4</sub>N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters
High conductivity n-Al<sub>0.6</sub>Ga<sub>0.4</sub>N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters Open
Highly doped n-Al 0.6 Ga 0.4 N can be used to form tunnel junctions (TJs) on deep ultraviolet (UVC) LEDs and markedly increase the light extraction efficiency (LEE) compared to the use of p-GaN/p-AlGaN. High quality Al 0.6 Ga 0.4 N was gro…
View article: Advances in heteroepitaxial integration of III-V and IV-VI semiconductors with electron channeling contrast imaging
Advances in heteroepitaxial integration of III-V and IV-VI semiconductors with electron channeling contrast imaging Open
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View article: High Performance Green LEDs for Solid State Lighting
High Performance Green LEDs for Solid State Lighting Open
The development of white LEDs for solid state lighting (SSL) has been driven in recent years by phosphor converted LEDs (pc-LEDs). However, losses (known as Stokes’ losses) between the blue pump LED and phosphor impose a fundamental effici…
View article: Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction Open
A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a…
View article: Barriers to carrier transport in multiple quantum well nitride-based <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>c</mml:mi></mml:math>-plane green light emitting diodes
Barriers to carrier transport in multiple quantum well nitride-based -plane green light emitting diodes Open
The presence of alloy disorder in III-nitride materials has been demonstrated to play a significant role in device performance through effects such as carrier localization and carrier transport. Relative to blue light emitting diodes (LEDs…
View article: 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates
560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates Open
We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy…
View article: Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes
Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes Open
Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron holography (HR-DFEH) were performed to investigate the composition of a polar [0001] GaN/AlxGa1 − xN/InyGa1 − yN light emitting diode. In particular, the II…
View article: Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template Open
We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm2 to 100 × 100 µm2, grown on a low defect density and large area (11-22) GaN template on patterned sapphire s…
View article: Nanometer scale structural and compositional inhomogeneities of half-Heusler CoTi1-xFexSb thin films
Nanometer scale structural and compositional inhomogeneities of half-Heusler CoTi1-xFexSb thin films Open
The correlative use of X-ray diffraction (XRD), scanning transmission electron microscopy (STEM), and atom probe tomography (APT) allows the structure of substitutionally alloyed half-Heusler compound CoTi1-xFexSb to be characterized at th…
View article: High spatial resolution correlated investigation of Zn segregation to stacking faults in ZnTe/CdSe nanostructures
High spatial resolution correlated investigation of Zn segregation to stacking faults in ZnTe/CdSe nanostructures Open
The correlative use of atom probe tomography (APT) and energy dispersive x-ray spectroscopy in scanning transmission electron microscopy (STEM) allows us to characterize the structure of ZnTe/CdSe superlattices at the nanometre scale. Both…
View article: Erratum: “Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography” [J. Appl. Phys. <b>121</b>, 225701 (2017)]
Erratum: “Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography” [J. Appl. Phys. <b>121</b>, 225701 (2017)] Open
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View article: High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells
High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells Open
Journal Article High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells Get access Massimo Catalano, Massimo Catalano Department of Materials Science…
View article: Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers Open
Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of th…