Benjamin Groven
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View article: Spontaneous and self-oriented growth during chemical vapor epitaxy of single-crystalline MoS2
Spontaneous and self-oriented growth during chemical vapor epitaxy of single-crystalline MoS2 Open
Conventional chemical vapor epitaxy concepts for single-crystalline molybdenum disulfide (MoS2) rely on sapphire template engineering to impart a preferred crystalline orientation. However, such epitaxy concepts may fall short t…
View article: Nanoscale spectroscopic investigation of impact of strain on field-effect mobility of WS<sub>2</sub>
Nanoscale spectroscopic investigation of impact of strain on field-effect mobility of WS<sub>2</sub> Open
In this work, an in-depth study of the strain originating from the metallic pads of field effect transistors with WS 2 channels are reported. Presence of tensile strain caused by Ni/Pd pads fabricated with a lift-off process is confirmed w…
View article: Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence
Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence Open
View article: Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition
Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition Open
Two-dimensional transition metal dichalcogenides (2D TMDs), such as MoS2 and WS2, have emerged as promising channel materials for future generation transistors. However, carbon-based surface contaminants pose a significant challenge in the…
View article: Process-Induced Modulation of Domain Orientations during WS<sub>2</sub> Epitaxy by Metal–Organic Chemical Vapor Deposition on Sapphire
Process-Induced Modulation of Domain Orientations during WS<sub>2</sub> Epitaxy by Metal–Organic Chemical Vapor Deposition on Sapphire Open
sponsorship: This work is part of the imec IIAP core CMOS programs and received funding from the European Union's Graphene Flagship grant agreement No 952792, 2D-EPL. I.K. acknowledges funding from the Research Foundation-Flanders for a Ph…
View article: 2D TMDC aging: a case study of monolayer WS<sub>2</sub> and mitigation strategies
2D TMDC aging: a case study of monolayer WS<sub>2</sub> and mitigation strategies Open
Due to their unique properties, two-dimensional transition metal dichalcogenides (2D TMDCs) are considered for diverse applications in microelectronics, sensing, catalysis, to name a few. A common challenge in 2D TMDC research is the film’…
View article: Oriented Two-dimensional Semiconducting Crystals on Amorphous Dielectrics by Selective Artificial Epitaxy
Oriented Two-dimensional Semiconducting Crystals on Amorphous Dielectrics by Selective Artificial Epitaxy Open
Defective grain boundaries form in semiconductors when deposition approaches do not control crystal grain orientation. This poses existential limitations to fabricating highly performing semiconductor devices with two-dimensional semicondu…
View article: Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides
Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides Open
sponsorship: This work was done in the imec IIAP core CMOS programs and received funding from the European Union's Graphene Flagship (Grant Agreement No. 952792, 2D-EPL). (European Union|952792)
View article: Wafer-scale characterization for two-dimensional material layers
Wafer-scale characterization for two-dimensional material layers Open
Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology techniques being intensively used to characterize 2D materials on small coupons, the developmen…
View article: Chemical Vapor Deposition of a Single-Crystalline MoS<sub>2</sub> Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface
Chemical Vapor Deposition of a Single-Crystalline MoS<sub>2</sub> Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface Open
Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield a single-crystalline MoS2 monolayer on commonly employed sapphire substrates. T…
View article: Toward Characterization and Assessment of Mos2 Fundamental Device Properties by Photoluminescence
Toward Characterization and Assessment of Mos2 Fundamental Device Properties by Photoluminescence Open
View article: Guiding principles for the design of a chemical vapor deposition process for highly crystalline transition metal dichalcogenides
Guiding principles for the design of a chemical vapor deposition process for highly crystalline transition metal dichalcogenides Open
Two-dimensional transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) method using a wide variety of precursors. Being a major elect…
View article: Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si12.svg" display="inline" id="d1e247"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> monolayers on sapphire substrates
Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS monolayers on sapphire substrates Open
View article: Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism
Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism Open
The complexity of the water adsorption-desorption mechanism at the interface of transition metal dichalcogenides (TMDs) and its impact on their current transport are not yet fully understood. Here, our work investigates the swift intercala…
View article: Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS<sub>2</sub> via Combined C‐AFM and ToF‐SIMS Characterization
Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS<sub>2</sub> via Combined C‐AFM and ToF‐SIMS Characterization Open
Atomically thin, 2D semiconductors, such as transition metal dichalcogenides, complement silicon in ultra‐scaled nano‐electronic devices. However, the semiconductor and its interfaces become increasingly more difficult to characterize chem…
View article: Processing Stability of Monolayer WS<sub>2</sub> on SiO<sub>2</sub>
Processing Stability of Monolayer WS<sub>2</sub> on SiO<sub>2</sub> Open
Using internal photoemission of electrons, the energy position of the valence band top edge in 1 monolayer WS 2 films on top of SiO 2 thermally-grown on Si was monitored to evaluate the stability of the WS 2 layer with respect to two criti…
View article: Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Impact of device scaling on the electrical properties of MoS2 field-effect transistors Open
View article: Impact of Device Scaling on the Electrical Properties of MoS2&nbsp;Field-effect Transistors
Impact of Device Scaling on the Electrical Properties of MoS2 Field-effect Transistors Open
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Her…
View article: Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition
Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition Open
Anisotropic growth of two-dimensional (2D) tungsten disulfide (WS2) crystals occurs during atomic layer deposition (ALD) from WS2 seeds at predetermined locations on large area dielectric substrates. The number of ALD reaction cycles deter…
View article: Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature
Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature Open
Monolayer-thin WS2 with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF6 and H2S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al2O3 starting surface. We investigat…
View article: Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism
Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism Open
© 2018 American Chemical Society. When two-dimensional (2D) group-VI transition metal dichalcogenides such as tungsten disulfide (WS 2 ) are grown by atomic layer deposition (ALD) for atomic growth control at low deposition temperatures (≤…
View article: Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates Open
The structure, crystallinity, and properties of as-deposited two-dimensional (2D) transition metal dichalcogenides are determined by nucleation mechanisms in the deposition process. 2D materials grown by atomic layer deposition (ALD) in th…
View article: Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS<sub>2</sub> from WF<sub>6</sub>, H<sub>2</sub> Plasma, and H<sub>2</sub>S
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS<sub>2</sub> from WF<sub>6</sub>, H<sub>2</sub> Plasma, and H<sub>2</sub>S Open
Two-dimensional (2D) transition metal dichalcogenides are potential low dissipative semiconductor materials for nanoelectronic devices. Such applications require the deposition of these materials in their crystalline form and with controll…