Benjamin McEwen
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View article: P-type conductivity in GaN:Be epitaxial layers
P-type conductivity in GaN:Be epitaxial layers Open
Electron transport properties of Be-doped heteroepitaxial GaN layers grown by metalorganic vapor phase epitaxy were investigated by means of temperature-dependent Hall effect measurements. The Be concentration was in the range of 4 × 1018−…
View article: Photoluminescence from Defects in Be‐Doped GaN
Photoluminescence from Defects in Be‐Doped GaN Open
While GaN is a crucial semiconductor material for bright light‐emitting devices, fabrication of p‐type GaN remains challenging since the Mg acceptor commonly used for p‐type doping is not shallow enough. Doping of GaN with Be is a promisin…
View article: Passivation of acceptors in GaN by hydrogen and their activation
Passivation of acceptors in GaN by hydrogen and their activation Open
GaN is an important semiconductor for energy-efficient light-emitting devices. Hydrogen plays a crucial role in gallium nitride (GaN) growth and processing. It can form electrically neutral complexes with acceptors during growth, which sig…
View article: Design and Demonstration of MOCVD-Grown <i>p</i>-Type Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN Quantum Well Infrared Photodetector
Design and Demonstration of MOCVD-Grown <i>p</i>-Type Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN Quantum Well Infrared Photodetector Open
Quantum well infrared photodetectors (QWIPs) have been demonstrated to be a suitable candidate for IR detection applications. These detectors attracted increasing interest due to their design flexibility and broad spectral absorption from …
View article: Toward The Advancement Of High-Efficiency P-Type Doping In Iii-Nitrides: Novel Beryllium Doping Techniques
Toward The Advancement Of High-Efficiency P-Type Doping In Iii-Nitrides: Novel Beryllium Doping Techniques Open
The III-nitride material system is well-suited to a broad range of applications in light emitting diodes and laser diodes, photodetectors, power management, and telecommunications. Much of III-nitrides’ utility derives from their direct, w…
View article: Photoluminescence from CdGa and HgGa acceptors in GaN
Photoluminescence from CdGa and HgGa acceptors in GaN Open
Photoluminescence from GaN implanted with Cd or Hg ions was studied and compared with first-principles calculations. In Cd-implanted GaN, the blue band (BLCd) with a maximum at 2.7 eV is attributed to the CdGa acceptor with an ionization e…
View article: Photoluminescence from GaN Implanted with Be and F
Photoluminescence from GaN Implanted with Be and F Open
GaN samples are implanted with Be and F and annealed in different conditions to activate the Be Ga acceptors. Photoluminescence spectra are studied to recognize the defects. The UVL Be band with a maximum at 3.38 eV and the YL Be band with…
View article: Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing
Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing Open
The diffusion behavior of Mg in Mg/N co-implanted GaN is investigated in response to a set of annealing conditions and methodologies, namely, 1000 °C/30 min thermal anneal, by high-temperature pulsed gyrotron microwave annealing at 1420 or…
View article: Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition
Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition Open
A systematic photoluminescence study of Be‐doped GaN grown by metal‐organic chemical vapor deposition is presented. All Be‐doped samples show the ultraviolet luminescence (UVL Be ) band with a maximum at 3.38 eV and the yellow luminescence…
View article: MOCVD Growth and Characterization of Be-Doped GaN
MOCVD Growth and Characterization of Be-Doped GaN Open
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor leve…
View article: Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors
Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors Open
We review the recent progress to achieve air stable III-nitride photocathodes for applications as photon detectors. High conductivity p-type films are critically important to realize high quantum efficiency (QE) photocathodes with effectiv…
View article: Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor
Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor Open
The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe w…
View article: p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing Open
We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during metalorganic chemical vapor deposition through sequential short-duration gyrotron microwave heating cycles at temperatures of 1200–1350 °C. GaN is imp…
View article: <i>In operando</i> investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application
<i>In operando</i> investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application Open
Here, we report on the application of an electron source with high accelerating voltage (62 kV–200 kV) to simulate betavoltaic power generation capabilities of a planar GaN PIN (p-GaN/i-GaN/n-GaN) device. The in situ electrical characteriz…
View article: Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD
Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD Open
We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template…