Benoît Martel
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View article: Impact of AlOx Capping Layer Thickness for Edge Passivation of TOPCon2 Shingle Solar Cell
Impact of AlOx Capping Layer Thickness for Edge Passivation of TOPCon2 Shingle Solar Cell Open
This work aims at understanding the short circuit current density losses observed on TOPCon² solar cells after AlOx layer deposition and annealing. This process is the most considered for edge passivation of shingle solar cell, who suffer …
View article: How to Combine SHJ Cell-Edge Passivation and Module Reliability?
How to Combine SHJ Cell-Edge Passivation and Module Reliability? Open
The use of cut-cells in most of the current modules is now the norm to maximise the final product performances. But the integration of such new cell configurations also comes with new challenges, especially if small cell size dimensions su…
View article: Edge passivation of shingled poly-Si/SiO<i><sub>x</sub></i>passivated contacts solar cells
Edge passivation of shingled poly-Si/SiO<i><sub>x</sub></i>passivated contacts solar cells Open
This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiO x passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlO x ) layers elaborated by th…
View article: Ultra-thin poly-Si/SiOx passivating contacts integration for high efficiency solar cells on n-type cast mono silicon wafers
Ultra-thin poly-Si/SiOx passivating contacts integration for high efficiency solar cells on n-type cast mono silicon wafers Open
In this work, ultra-thin (15nm) poly-crystalline Silicon (poly-Si) on silicon oxide (SiOx) stacks are elaborated on n-type cast-mono crystalline silicon (c-Si) wafers. Such advanced passivating contacts are integrated, in combination with …
View article: Phosphorus Doped Poly-Si Passivated Contacts by LPCVD and PECVD for Industrial Large-Area Solar Cells
Phosphorus Doped Poly-Si Passivated Contacts by LPCVD and PECVD for Industrial Large-Area Solar Cells Open
This work aims at developing high quality phosphorus (P) doped poly-Si/SiOx structures using massproduction compatible equipment from SEMCO-SMARTECH. The LPCVD and the PECVD techniques were both investigated for the poly-Si deposition, wit…
View article: Polysilicon Layers Doped by Plasma Immersion Ion Implantation (PIII): New Paths for Industrial Processing of Passivated Contacts Solar Cells
Polysilicon Layers Doped by Plasma Immersion Ion Implantation (PIII): New Paths for Industrial Processing of Passivated Contacts Solar Cells Open
We present a study of the passivation properties of either PECVD or LPCVD intrinsic amorphous silicon (a-Si(i)) layers deposited on respectively chemical and thermal SiOx films. Plasma Immersion Ion Implantation (PIII) was used as ex-situ …
View article: Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cells
Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cells Open
International audience
View article: TCO contacts on poly-Si layers: High and low temperature approaches to maintain passivation and contact properties
TCO contacts on poly-Si layers: High and low temperature approaches to maintain passivation and contact properties Open
International audience
View article: On the Fabrication of Solar Cells Based on Newly Produced Recycled Silicon Feedstocks from CABRISS – A Comparative Study between Material Properties and Solar Cells Performances
On the Fabrication of Solar Cells Based on Newly Produced Recycled Silicon Feedstocks from CABRISS – A Comparative Study between Material Properties and Solar Cells Performances Open
Second life silicon solar cells based on 100% recycled silicon have been recently produced at CEA-INES in the frame of the CABRISS Project. A maximum efficiency of 18.1% has been reached (Al-BSF solar cells), with Mono-like silicon substra…
View article: Comparison of Characterization Techniques for Measurements of Doping Concentrations in Compensated n-type Silicon
Comparison of Characterization Techniques for Measurements of Doping Concentrations in Compensated n-type Silicon Open
International audience
View article: Light Induced Degradation in PERC Solar Cells and Comparison with OxyMap
Light Induced Degradation in PERC Solar Cells and Comparison with OxyMap Open
The PERC solar cells performances fabricated using different base resistivities and oxygen concentrations are found to be correlated. Samples with [Oi] concentration of 10.69 ppma and a base resistivity of 1.75 Ω cm reaches median efficien…
View article: Recent Progress on the CEA-INES Heterojunction Solar Cell Pilot Line
Recent Progress on the CEA-INES Heterojunction Solar Cell Pilot Line Open
In this paper we present progress made during 2014/2015 on the heterojunction (HJ) solar cell pilot line (LabFab), located at the French National Solar Energy Institute (INES) and operated by the French Alternative Energies and Atomic Ener…