Berg Dodson
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View article: Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with <i>in vacuo</i> atomic layer deposition
Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with <i>in vacuo</i> atomic layer deposition Open
Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, a…
View article: Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al<sub>2</sub>O<sub>3</sub>/MgO memristors
Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al<sub>2</sub>O<sub>3</sub>/MgO memristors Open
Ultrathin (sub-2 nm) Al 2 O 3 /MgO memristors were recently developed using an in vacuo atomic layer deposition (ALD) process that minimizes unintended defects and prevents undesirable leakage current. These memristors provide a unique pla…
View article: Issue Information
Issue Information Open
No abstract is available for this article.
View article: Electrical Conductivity of the Aluminum Oxide Diffusion Barrier Following Catalytic Carbon Nanotube Growth
Electrical Conductivity of the Aluminum Oxide Diffusion Barrier Following Catalytic Carbon Nanotube Growth Open
Carbon nanotube templated microfabrication (CNT-M) is a method that allows high-aspect ratio structures to be made for microelectromechanical systems (MEMS) devices. One concern when making monolithic electrical devices using CNT-M is that…