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View article: Physical properties of Fe-doped CdS quantum dots: single dot rectifying diode application
Physical properties of Fe-doped CdS quantum dots: single dot rectifying diode application Open
Fe-doped CdS single dot rectifying diodes were characterized using scanning tunneling microscope (STM) at ambient atmosphere. Fe doping reduced the threshold voltage for a single dot electronic device with minimal electrical power loss.
View article: Fabrication of an In <sub>2</sub> O <sub>3</sub> NP-based high-performance low-operating voltage phototransistor and tuning of its photosensitivity from UV to blue region
Fabrication of an In <sub>2</sub> O <sub>3</sub> NP-based high-performance low-operating voltage phototransistor and tuning of its photosensitivity from UV to blue region Open
In this work, a visible-blind low-operating voltage phototransistor was fabricated using colloidal In 2 O 3 via a solution process technique, and its photosensitivity was tuned to the blue region by adding a PbI 2 layer to the channel.
View article: Optically/electrically controlled Ag <sup>+</sup> metallization in solution-processed oxide memtransistors for neuromorphic computing
Optically/electrically controlled Ag <sup>+</sup> metallization in solution-processed oxide memtransistors for neuromorphic computing Open
Low-cost, solution-processed oxide memtransistor with stable resistive switching, ultra-low voltage and power, tunable synaptic behavior, and high neural network accuracy (98% optical and 95% electrical), enabling energy-efficient neuromor…
View article: One‐Step Room Temperature Synthesis of Printable Carbon Quantum Dots Ink for Visual Encryption and High‐Performance Photodetector
One‐Step Room Temperature Synthesis of Printable Carbon Quantum Dots Ink for Visual Encryption and High‐Performance Photodetector Open
Carbon quantum dots (CQDs) have emerged as promising materials for optoelectronic applications and have garnered much interest as potential competitors to conventional inorganic or hybrid semiconductor quantum dots because of carbon's intr…
View article: Role of ultrathin Ti3C2Tx MXene layer for developing solution-processed high-performance low voltage metal oxide transistors
Role of ultrathin Ti3C2Tx MXene layer for developing solution-processed high-performance low voltage metal oxide transistors Open
Metal oxide transistors have garnered substantial attention for their potential in low-power electronics, yet challenges remain in achieving both high performance and low operating voltages through solution-based fabrication methods. Optim…
View article: Improved Ammonia Sensitivity and Broadband Photodetection by Using Pbttt-C14/Ws2-Qds Nano-Heterojunction Based Thin Film Transistor
Improved Ammonia Sensitivity and Broadband Photodetection by Using Pbttt-C14/Ws2-Qds Nano-Heterojunction Based Thin Film Transistor Open
View article: Correction: Surface modification of medical grade biomaterials by using a low-temperature-processed dual functional Ag–TiO<sub>2</sub> coating for preventing biofilm formation
Correction: Surface modification of medical grade biomaterials by using a low-temperature-processed dual functional Ag–TiO<sub>2</sub> coating for preventing biofilm formation Open
Correction for ‘Surface modification of medical grade biomaterials by using a low-temperature-processed dual functional Ag–TiO 2 coating for preventing biofilm formation’ by Lipi Pradhan et al. , J. Mater. Chem. B , 2024, https://doi.org/1…
View article: Observation of near room temperature thin film superconductivity of atmospherically stable Ag-Au mesoscopic thin film
Observation of near room temperature thin film superconductivity of atmospherically stable Ag-Au mesoscopic thin film Open
An environmentally stable mesoscopic thin film of Au of certain thickness has been deposited thermally on top of a Ag+ implanted oxide substrate to develop a close to room temperature superconductor. This thin film has been deposited in tw…
View article: Solvent Evaporation Induced Large-Scale Synthesis of Cs<sub>4</sub>PbBr<sub>6</sub> and CsPbBr<sub>3</sub> Microcrystals: Optical Properties and Backlight Application for LEDs
Solvent Evaporation Induced Large-Scale Synthesis of Cs<sub>4</sub>PbBr<sub>6</sub> and CsPbBr<sub>3</sub> Microcrystals: Optical Properties and Backlight Application for LEDs Open
The contemporary work focuses on embossing the emissive nature of lead halide perovskite materials, specifically Cs4PbBr6 microcrystal powder prepared via single step bulk recrystallization method followed by the solv…
View article: Devices having high dielectric constant, ionically-polarizable materials
Devices having high dielectric constant, ionically-polarizable materials Open
An electronic or electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes. The dielectric layer has electrically insulatin…
View article: Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material
Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material Open
Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides a…
View article: Two-Dimensional Silver Nanonetwork on Ag4ti5o12 Film as Highly Efficient Sers Substrate
Two-Dimensional Silver Nanonetwork on Ag4ti5o12 Film as Highly Efficient Sers Substrate Open
View article: Enhancement of Ammonia Gas Sensitivity and Selectivity by Depleted Layer of Pbttt-C14/Mos2-Qds Heterojunction Based Thin Film Transistor
Enhancement of Ammonia Gas Sensitivity and Selectivity by Depleted Layer of Pbttt-C14/Mos2-Qds Heterojunction Based Thin Film Transistor Open
View article: Negative Photoconductance in Sno2/Tio2 Nps Heterostructure Based Phototransistor
Negative Photoconductance in Sno2/Tio2 Nps Heterostructure Based Phototransistor Open
View article: Solution Processed Li-Al2o3/Linbo3/Li-Al2o3 Stacked Gate Dielectric for a Non-Volatile Ferroelectric Thin Film Transistor
Solution Processed Li-Al2o3/Linbo3/Li-Al2o3 Stacked Gate Dielectric for a Non-Volatile Ferroelectric Thin Film Transistor Open
View article: Ingenious Fabrication of Ag-Filled Porous Anodic Alumina Films as Powerful SERS Substrates for Efficient Detection of Biological and Organic Molecules
Ingenious Fabrication of Ag-Filled Porous Anodic Alumina Films as Powerful SERS Substrates for Efficient Detection of Biological and Organic Molecules Open
Surface-enhanced Raman scattering (SERS) has been widely used to effectively detect various biological and organic molecules. This detection method needs analytes adsorbed onto a specific metal nanostructure, e.g., Ag-nanoparticles. A subs…
View article: Resolving Cross-Sensitivity Effect in Fluorescence Quenching for Simultaneously Sensing Oxygen and Ammonia Concentrations by an Optical Dual Gas Sensor
Resolving Cross-Sensitivity Effect in Fluorescence Quenching for Simultaneously Sensing Oxygen and Ammonia Concentrations by an Optical Dual Gas Sensor Open
Simultaneous sensing of multiple gases by a single fluorescent-based gas sensor is of utmost importance for practical applications. Such sensing is strongly hindered by cross-sensitivity effects. In this study, we propose a novel analysis …
View article: Solution Processed Low Voltage Metal-Oxide transistor by using TiO2 /Li-Al2O3 stacked Gate Dielectric
Solution Processed Low Voltage Metal-Oxide transistor by using TiO2 /Li-Al2O3 stacked Gate Dielectric Open
A solution processed top-contact bottom gated SnO2 thin-film transistor (TFT) has been fabricated by using a TiO2/ Li-Al2O3 bilayer stacked gate dielectric that show operating voltage of this TFT…
View article: Scalable Synthesis of a Sub-10 nm Chalcopyrite (CuFeS<sub>2</sub>) Nanocrystal by the Microwave-Assisted Synthesis Technique and Its Application in a Heavy-Metal-Free Broad-Band Photodetector
Scalable Synthesis of a Sub-10 nm Chalcopyrite (CuFeS<sub>2</sub>) Nanocrystal by the Microwave-Assisted Synthesis Technique and Its Application in a Heavy-Metal-Free Broad-Band Photodetector Open
A heavy-metal-free chalcopyrite (CuFeS2) nanocrystal has been synthesized via microwave-assisted growth. Large-scale nanocrystals with an average particle size of 5 nm are fabricated by this technique within a very short period …
View article: Lithography-free fabrication of low operating voltage and large channel length graphene transistor with current saturation by utilizing Li+ of ion-conducting-oxide gate dielectric
Lithography-free fabrication of low operating voltage and large channel length graphene transistor with current saturation by utilizing Li+ of ion-conducting-oxide gate dielectric Open
The large channel length graphene field-effect transistor (GFET) can outperform its competitors due to its larger active area and lower noise. Such long channel length devices have numerous applications, e.g., in photodetectors, biosensors…
View article: Dielectric/semiconductor interfacial doping to develop solution\n processed high performance 1 V ambipolar oxide-transistor and its application\n as CMOS inverter
Dielectric/semiconductor interfacial doping to develop solution\n processed high performance 1 V ambipolar oxide-transistor and its application\n as CMOS inverter Open
p-type doping from the dielectric/semiconductor interface of a SnO2 thin film\ntransistor (TFT) has been utilized to develop high carrier mobility balanced\nambipolar oxide-transistor. To introduce this interfacial-doping, bottom-gate\ntop…
View article: Dielectric/semiconductor interfacial doping to develop solution processed high performance 1 V ambipolar oxide-transistor and its application as CMOS inverter
Dielectric/semiconductor interfacial doping to develop solution processed high performance 1 V ambipolar oxide-transistor and its application as CMOS inverter Open
p-type doping from the dielectric/semiconductor interface of a SnO2 thin film transistor (TFT) has been utilized to develop high carrier mobility balanced ambipolar oxide-transistor. To introduce this interfacial-doping, bottom-gate top-co…
View article: Photodiodes: High‐Performance, Solution‐Processed Non‐polymeric Organic Photodiodes (Advanced Optical Materials 1/2015)
Photodiodes: High‐Performance, Solution‐Processed Non‐polymeric Organic Photodiodes (Advanced Optical Materials 1/2015) Open
On page 50, E. B. Namdas and co-workers describe how key organic photodiode (OPD) device characteristics can be optimized and demonstrate high-performance, solution-processed, broadband OPDs based on a non-polymeric organic semiconductor, …