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View article: Recent Progress in Flexible Wearable Sensors for Real-Time Health Monitoring: Materials, Devices, and System Integration
Recent Progress in Flexible Wearable Sensors for Real-Time Health Monitoring: Materials, Devices, and System Integration Open
Flexible and wearable sensors have emerged as transformative technologies in the field of real-time health monitoring, offering non-invasive, continuous, and personalized healthcare solutions. These devices are designed to conform intimate…
View article: Recent Design and Application Advances in Micro-Electro-Mechanical System (MEMS) Electromagnetic Actuators
Recent Design and Application Advances in Micro-Electro-Mechanical System (MEMS) Electromagnetic Actuators Open
Micro-electro-mechanical system (MEMS) electromagnetic actuators have rapidly evolved into critical components of various microscale applications, offering significant advantages including precision, controllability, high force density, an…
View article: Transmission Characteristics Analysis of a Twin-Waveguide Cavity
Transmission Characteristics Analysis of a Twin-Waveguide Cavity Open
The transmission spectrum of a twin-waveguide cavity is systematically analyzed based on coupled mode theory, using the transfer matrix method (TMM). The results show that the traveling-wave transmission spectra of the twin-waveguide cavit…
View article: Tailoring optoelectronic performance through compositional engineering to optimize trap densities in Cs <sub>x</sub> MA<sub>(1−</sub> <sub>x)</sub> PbI<sub>3</sub> perovskite nanowires
Tailoring optoelectronic performance through compositional engineering to optimize trap densities in Cs <sub>x</sub> MA<sub>(1−</sub> <sub>x)</sub> PbI<sub>3</sub> perovskite nanowires Open
Organic-inorganic methylammonium lead iodide perovskite (MAPbI 3 ) nanowires (NWs) have attracted significant attention in the realm of optoelectronic devices due to their outstanding optoelectronic properties. However, the persistent chal…
View article: Stepped-height ridge waveguide MQW polarization mode converter monolithically integrated with sidewall grating DFB laser
Stepped-height ridge waveguide MQW polarization mode converter monolithically integrated with sidewall grating DFB laser Open
We report the first demonstration of a 1555 nm stepped-height ridge waveguide polarization mode converter monolithically integrated with a side wall grating distributed-feedback (DFB) laser using the identical epitaxial layer scheme. The d…
View article: High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction
High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction Open
We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high outp…
View article: Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array
Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array Open
高峰值功率半导体激光阵列在高温工作条件中的应用需求日益凸显,本文以微通道封装的高峰值功率960 nm半导体激光阵列为研究对象,通过精密控温系统测试了其在10～80℃范围内峰值功率、电光转换效率、工作电压和光谱等一系列光电特性,结合理论分析,给出不同温度下电光转化效率的能量损耗分布。结果表明,工作温度从10℃升高到80℃后,电光转化效率从63.95%下降到47.68%,其中载流子泄漏损耗占比从1.93%上升到14.85%,是导致电光转换效率下降的主要因素。该研究对高峰值功率半…
View article: High-Power Single-Longitudinal-Mode DFB Semiconductor Laser Based on Sampled Moiré Grating
High-Power Single-Longitudinal-Mode DFB Semiconductor Laser Based on Sampled Moiré Grating Open
In this mymargin letter, we experimentally demonstrated a 1550-nm high-power single-longitudinal-mode (SLM) distributed feedback (DFB) semiconductor laser based on sampled moiré grating (SMG). By designing the sampling structure wit…
View article: Lateral thermal dissipation of InP-based InGaAsP ridge waveguide laser
Lateral thermal dissipation of InP-based InGaAsP ridge waveguide laser Open
Thermal dissipation is critical for any semiconductor lasers, because heat will lead to their performance degradation, such as wavelength shift, output power decrease, and even device damage. For InP-based InGaAsP semiconductor lasers, hea…
View article: Improved 808-nm High-Power Laser Performance With Single-Mode Operation (Vertical Direction) in Large Optical Cavity Waveguide
Improved 808-nm High-Power Laser Performance With Single-Mode Operation (Vertical Direction) in Large Optical Cavity Waveguide Open
We present a detailed study of the effect of large optical cavity (LOC) waveguide design on the laser's kink performance and it was found that a multimode waveguide in the epi growth direction could lead to the occurrence of the power kink…
View article: 830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence
830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence Open
We report on our design and fabrication of 830-nm high-power semiconductor lasers with very low beam divergence. Here, we propose a novel approach in which by combining asymmetric waveguide and a feature called “pins” together, we were abl…
View article: Experimental Demonstration of a Multicorrugation-Pitch-Modulated (MCPM) DFB Semiconductor Laser Based on Reconstruction-Equivalent-Chirp Technology
Experimental Demonstration of a Multicorrugation-Pitch-Modulated (MCPM) DFB Semiconductor Laser Based on Reconstruction-Equivalent-Chirp Technology Open
A multicorrugation-pitch-modulated (MCPM) distributed-feedback semiconductor laser is experimentally demonstrated for the first time to achieve stable single longitudinal mode (SLM) performance. The MCPM structure was equivalently realized…
View article: Study on DFB semiconductor laser array integrated with grating reflector based on reconstruction-equivalent-chirp technique
Study on DFB semiconductor laser array integrated with grating reflector based on reconstruction-equivalent-chirp technique Open
A 4-channel distributed feedback (DFB) semiconductor laser array with incorporation of a grating reflector utilizing reconstruction-equivalent-chirp technique is theoretically studied and experimentally demonstrated. By integrating with a …