Brian Romanczyk
YOU?
Author Swipe
View article: Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N
Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N Open
A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO3) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al0.24Ga0.76N. In the absence of an AlGaN etch stop layer, the …
View article: Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs Open
In this article, N-polar GaN-on-sapphire deep-recess metal–insulator–semiconductor (MIS)-high-electron-mobility transistors (HEMTs) with a breakthrough performance at -band are presented. Compared with prior N-polar GaN MIS-HEMTs, a thin …
View article: Demonstration of Record-High mm-Wave Power Performance using N-Polar Gallium Nitride HEMTs
Demonstration of Record-High mm-Wave Power Performance using N-Polar Gallium Nitride HEMTs Open
Gallium Nitride high electron mobility transistors (GaN HEMTs) are proven to be well suited devices for highly efficient solid-state radio frequency power amplification, especially when high output power is desired. Existing GaN transistor…
View article: High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces Open
This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical…