Brian Rounsaville
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View article: Development of APCVD BSG and POCl<sub>3</sub> Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication
Development of APCVD BSG and POCl<sub>3</sub> Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication Open
This paper presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using APCVD-deposited boron silicate glass and ex-situ POCl3 diffusion in a single hig…
View article: Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells
Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells Open
This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H2S) gas phase reaction and capped by a hydrogenated amorphou…
View article: Boron diffusion in silicon devices
Boron diffusion in silicon devices Open
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of t…
View article: Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells
Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells Open
A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was stud…
View article: Technology Development for ≥ 22.5% Efficient p-PERC Solar Cells
Technology Development for ≥ 22.5% Efficient p-PERC Solar Cells Open
The overall objective of this program is to achieve ≥ 22.5 % bifacial p-type cell efficiencies by developing and implementing optimized homogeneous phosphorus (P) emitter on the front and tunnel oxide passivated boron (B) doped poly-Si con…
View article: Investigation on Light Stability of Injected Charge in α-SiN<sub>x</sub>: H by Plasma Charge Injection Technology
Investigation on Light Stability of Injected Charge in α-SiN<sub>x</sub>: H by Plasma Charge Injection Technology Open
The plasma charge injection technology reported earlier can be a low-cost alternative to the Al2O3 passivation technology. The charge stability under sunlight exposure is a key concern. We investigated the light-induced loss of injected ch…
View article: Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)
Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report) Open
The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear si…
View article: Enhanced Stability of Exposed PECVD Grown Thin <i>n</i> <sup>+</sup> Poly-Si/SiO<i> <sub>x</sub> </i> Passivating Contacts With Al<sub>2</sub>O<sub>3</sub> Capping Layer During High Temperature Firing
Enhanced Stability of Exposed PECVD Grown Thin <i>n</i> <sup>+</sup> Poly-Si/SiO<i> <sub>x</sub> </i> Passivating Contacts With Al<sub>2</sub>O<sub>3</sub> Capping Layer During High Temperature Firing Open
Carrier selective poly-Si/SiOx contacts have become a very strong contender for next generation high-efficiency Si solar cells as well as Si-based tandem cells. A thin unmetallized poly-Si/SiOx passivated contact on the top surface of the …
View article: 26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiO<sub>x</sub>Passivating Contact Silicon Cell
26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiO<sub>x</sub>Passivating Contact Silicon Cell Open
The rapid rise in single-junction perovskite solar cell (PSC) efficiencies, tunable bandgap, and low-cost solution processability make PSCs an attractive candidate for tandems with Si bottom cells. However, the challenge is to fabricate a …
View article: Title: Low-Cost, Advanced Metallization to Mitigate Cell-Crack-Induced Degradation
Title: Low-Cost, Advanced Metallization to Mitigate Cell-Crack-Induced Degradation Open
With the continued advancements in the solar industry, the cost of solar electricity is quickly reaching parity with fossil-fuel-based generation. The movement toward transitioning to carbon neutrality as a state and as a country, has incr…
View article: Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint
Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint Open
We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts cont…
View article: Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact
Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact Open
This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm2 n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact…
View article: High-efficiency selective boron emitter formed by wet chemical etch-back for <i>n</i>-type screen-printed Si solar cells
High-efficiency selective boron emitter formed by wet chemical etch-back for <i>n</i>-type screen-printed Si solar cells Open
Front metal contact induced recombination and resistance are major efficiency limiting factors of large-area screen-printed n-type front junction Si solar cells with homogeneous emitter and tunnel oxide passivated back contact (TOPCON). Th…