Brian Rummel
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View article: TCAD-Machine Learning Enabled TID Compact Model Development for Commercial SiC MOSFET
TCAD-Machine Learning Enabled TID Compact Model Development for Commercial SiC MOSFET Open
We propose a TCAD-machine learning coupled approach that combines a TCAD tool (Charon), optimization/uncertainty quantification tool (Dakota), surrogate models, and Bayesian learning capabilities. The coupling approach is used for accurate…
View article: A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance
A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance Open
The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. W…
View article: Enabling Optical & Electrical Characterization of Al2O3/GaN Interfaces with Transparent ITO Contacts
Enabling Optical & Electrical Characterization of Al2O3/GaN Interfaces with Transparent ITO Contacts Open
View article: Impact of surface pretreatment on Al2O3/GaN and HfO2/GaN band offsets measured by XPS
Impact of surface pretreatment on Al2O3/GaN and HfO2/GaN band offsets measured by XPS Open
View article: Reduction of Defects at or near ALD-Al2O3/GaN Interfaces for Improved Electrical Performance of GaN Power Devices
Reduction of Defects at or near ALD-Al2O3/GaN Interfaces for Improved Electrical Performance of GaN Power Devices Open
View article: Silicon Carbide Research for Energy Efficiency and National Security
Silicon Carbide Research for Energy Efficiency and National Security Open
View article: TCAD-Optimization Coupling Enabled TID Modeling and Calibration of Commercial SiC Power MOSFET
TCAD-Optimization Coupling Enabled TID Modeling and Calibration of Commercial SiC Power MOSFET Open
View article: Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing
Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing Open
View article: Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
Advanced Design Concepts for Vertical Gallium Nitride MOSFETs Open
View article: Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors
Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors Open
Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. T…
View article: Visualizing and Quantifying Thermal Conductance and Strain at Compression Bonded GaN-Diamond Interfaces via Optical Methods
Visualizing and Quantifying Thermal Conductance and Strain at Compression Bonded GaN-Diamond Interfaces via Optical Methods Open
View article: Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics
Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics Open
View article: Design and Evaluation of Vertical GaN PN Diode Junction Termination Extensions in High Temperature Environments
Design and Evaluation of Vertical GaN PN Diode Junction Termination Extensions in High Temperature Environments Open
View article: Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique. Open
View article: (Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains
(Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains Open
Wide-bandgap semiconductors have a significant advantage over conventional Si-based electronics by leveraging materials properties to achieve higher breakdown voltage, lower on-resistance, and high-frequency operation. For electric vehicle…
View article: Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique. Open
View article: Vertical Gallium Nitride MOSFETs for Electric Drivetrains.
Vertical Gallium Nitride MOSFETs for Electric Drivetrains. Open
View article: A unified theory of free energy functionals and applications to diffusion
A unified theory of free energy functionals and applications to diffusion Open
Free energy functionals of the Ginzburg–Landau type lie at the heart of a broad class of continuum dynamical models, such as the Cahn–Hilliard and Swift–Hohenberg equations. Despite the wide use of such models, the assumptions embodied in …
View article: Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs.
Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs. Open
View article: Imaging of surface acoustic waves on GaAs using 2D confocal Raman microscopy and atomic force microscopy
Imaging of surface acoustic waves on GaAs using 2D confocal Raman microscopy and atomic force microscopy Open
Surface acoustic wave devices have been fabricated on a GaAs 100 substrate to demonstrate the capability of 2D Raman microscopy as an imaging technique for acoustic waves on the surface of a piezoelectric substrate. Surface acoustic waves …
View article: Title: Low-Cost, Advanced Metallization to Mitigate Cell-Crack-Induced Degradation
Title: Low-Cost, Advanced Metallization to Mitigate Cell-Crack-Induced Degradation Open
With the continued advancements in the solar industry, the cost of solar electricity is quickly reaching parity with fossil-fuel-based generation. The movement toward transitioning to carbon neutrality as a state and as a country, has incr…