Byoung Hun Lee
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View article: Improving the Performance of Ultrathin ZnO TFTs Using High-Pressure Hydrogen Annealing
Improving the Performance of Ultrathin ZnO TFTs Using High-Pressure Hydrogen Annealing Open
Ultrathin oxide semiconductors are promising channel materials for next-generation thin-film transistors (TFTs), but their performance is severely limited by bulk and interface defects as the channel thickness approaches a few nanometers. …
View article: Visualizing a Terahertz Superfluid Plasmon in a Two-Dimensional Superconductor
Visualizing a Terahertz Superfluid Plasmon in a Two-Dimensional Superconductor Open
The superconducting gap defines the fundamental energy scale for the emergence of dissipationless transport and collective phenomena in a superconductor. In layered high-temperature cuprate superconductors, where the Cooper pairs are confi…
View article: Hydrogen Plasma Treatment for Improving Reliability of In‐Ga‐Zn‐O Transistors Without Side Effects Through Post‐Annealing Process
Hydrogen Plasma Treatment for Improving Reliability of In‐Ga‐Zn‐O Transistors Without Side Effects Through Post‐Annealing Process Open
In this work, a novel hydrogen process is proposed to enhance the stability of IGZO transistors without side effects such as defect generation or negative threshold voltage (V TH ) shift. Conventional hydrogen treatments on IGZO transistor…
View article: Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor
Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor Open
The complementary field‐effect transistor (CFET) structure is a highly area‐efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recrystallization, which has been limiting fu…
View article: Ultralow-temperature ultrafast formation of single-crystalline graphene via metal-assisted graphitization of silicon-carbide
Ultralow-temperature ultrafast formation of single-crystalline graphene via metal-assisted graphitization of silicon-carbide Open
Non-conventional epitaxial techniques, such as van der Waals epitaxy (vdWE) and remote epitaxy, have attracted substantial attention in the semiconductor research community for their exceptional capability to continuously produce high-qual…
View article: Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium–Zirconium Oxide
Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium–Zirconium Oxide Open
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with…
View article: Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor
Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor Open
Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process fo…
View article: Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices
Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices Open
The unique characteristics of an anti‐ambipolar switch (AAS) device exhibit Λ‐shaped transfer responses (namely delta conductance) and present unique opportunities to overcome the limit of silicon‐based, complementary metal‐oxide‐semicondu…
View article: Pulsed <i>I–V</i> Analysis of Slow Domain Switching in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Graphene FETs
Pulsed <i>I–V</i> Analysis of Slow Domain Switching in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Graphene FETs Open
In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The dom…
View article: Reconfigurable Single-Layer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency
Reconfigurable Single-Layer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency Open
A reconfigurable passive device that can manipulate its resonant frequency by controlling its quantum capacitance value without requiring complicated equipment has been experimentally investigated by modifying the Fermi level of large-area…
View article: Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process
Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process Open
A p -type ternary logic device with a stack-channel structure is demonstrated using an organic p -type semiconductor, dinaphtho[2,3- b :2',3'- f ]thieno[3,2- b ]thiophene (DNTT). A photolithography-based patterning process is developed to …
View article: β‐Mercaptoethanol‐Enabled Long‐Term Stability and Work Function Tuning of MXene
β‐Mercaptoethanol‐Enabled Long‐Term Stability and Work Function Tuning of MXene Open
The oxidation degradation by unsaturated metal atoms or dangling bonds at MXene edges and defects severely hinders the practical application of MXene. Herein, a passivation scheme for Ti 3 C 2 T x MXene is demonstrated by utilizing a sulfh…
View article: Large scale graphene thermoelectric device with high power factor using gradient doping profile
Large scale graphene thermoelectric device with high power factor using gradient doping profile Open
The performance of a thermoelectric device fabricated with centimeter-scale monolayer graphene (active size, ∼7 × 1 cm2) was investigated in this study. The carrier type and junction profile of the active graphene layer were modulated by c…
View article: Dual-Channel P-Type Ternary DNTT–Graphene Barristor
Dual-Channel P-Type Ternary DNTT–Graphene Barristor Open
P -type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p -type ternary device showing three distinct electrical output states with controllable thr…
View article: Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits
Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits Open
Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼106) and adjustable op…
View article: Performance enhancement of graphene/Ge near-infrared photodetector by modulating the doping level of graphene
Performance enhancement of graphene/Ge near-infrared photodetector by modulating the doping level of graphene Open
In this paper, we improved the performance of a near-infrared graphene/germanium heterojunction photodetector at atmospheric pressure and at room temperature. We applied graphene with p-type chemical doping (doping chemical: polyacrylic ac…
View article: High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction
High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction Open
The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active…
View article: Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction Open
The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2,…