K. C. Baucom
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View article: A revolution in micropower : the catalytic nanodiode.
A revolution in micropower : the catalytic nanodiode. Open
Our ability to field useful, nano-enabled microsystems that capitalize on recent advances in sensor technology is severely limited by the energy density of available power sources. The catalytic nanodiode (reported by Somorjai's group at B…
View article: Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition
Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition Open
We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAaSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb cladding and strained InAsSb active regions. These emitters ha…
View article: Surface Stoichiometry, Structure, and Kinetics of GaAs MOCVD
Surface Stoichiometry, Structure, and Kinetics of GaAs MOCVD Open
We have used reflectance-difference spectroscopy (RDS) to examine the surface phases of GaAs(100) during metalorganic chemical vapor deposition (MOCVD). Since the identities of two important surface phases were unknown, we determined their…
View article: Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition
Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition Open
The authors report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb emitters using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained…
View article: Use of high index substrates to enable dislocation filtering in large mismatch systems
Use of high index substrates to enable dislocation filtering in large mismatch systems Open
We report results in three areas of research relevant to the fabrication of a wide range of optoelectronic devices: The development of a new x-ray diffraction technique that can be used to rapidly determine the optimal period of a strained…
View article: Ordering and bandgap reduction in InAs{sub 1{minus}x}Sb{sub x} alloys
Ordering and bandgap reduction in InAs{sub 1{minus}x}Sb{sub x} alloys Open
InAs{sub 1{minus}x}Sb{sub x} alloys grown by MBE and MOCVD are found to have reduced emission energies due to CuPt-type order, even for Sb concentrations as low as x = 0.07 ({Delta}E = 25--65 meV). Cross-section TEM examination of such all…
View article: Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters
Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters Open
The authors have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) using metal-organic chemical vapor deposition (MOCVD). X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLS`s. …
View article: Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters
Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters Open
We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface …